Related papers: High Breakdown Field Multi-kV UWBG AlGaN Transisto…
This paper presents a power amplifier designed for Wi-Fi 6E using the 2 um gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) process. By employing third-order inter-modulation signal cancellation, harmonic suppression, and an…
The modified rigorous coupled-wave analysis technique is developed to describe the optical characteristics of the plasmonic structures with the grating-gated delta-thin conductive channel in the far- and near-field zones of electromagnetic…
We report on a strongly coupled bilayer graphene (BLG) - \bise\ device with a junction resistance of less than 1.5 k$\Omega\mu$m$^2$. This device exhibits unique behavior at the interface, which cannot be attributed to either material in…
This letter presents the design, manufacturing and operational performance of a graphene-flakes based screenprinted wideband elliptical dipole antenna operating from 2 GHz up to 5 GHz for low cost wireless communications applications. To…
An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this nanowire displayed a…
We reported on the observation of extremely high-density ($>10^{14}$cm$^{-2}$) 2D electron gas in N-polar AlGaN/GaN heterostructures grown on sapphire substrates. Due to introducing the GaN/AlN superlattice (SL) back barrier between the GaN…
Active Galactic Nuclei (AGN) with bright radio jets offer the opportunity to study the structure of and physical conditions in relativistic outflows. For such studies, multi-frequency polarimetric very long baseline interferometric (VLBI)…
Graphene-based photodetectors, taking advantage of high carrier mobility and broadband absorption in graphene, have recently experienced rapid development. However, their performances with respect to the responsivity and bandwidth are still…
Ultra-wideband (UWB) communication is an emerging wireless technology that promises high data rates over short distances and precise locationing. The large available bandwidth and the constraint of a maximum power spectral density drives a…
The optical conductivity of MgB$_2$ has been determined on a dense polycrystalline sample in the spectral range 6 meV - 4.6 eV using a combination of ellipsometric and normal incidence reflectivity measurements. $\sigma_{1}(\omega)$…
Fabrication of low-RF loss GaN-on-Si HEMT stacks is critical to enable competitive front-end-modules for 5G and 6G applications. The main contribution to RF losses is the interface between the III-N layer and the HR Si wafer, more…
We present a comprehensive closed-form GN/EGN model supporting ultra-wide-band systems spanning 50 THz of optical bandwidth. We show a case-study of 10x100km of SMF where we gradually increase the number of channels across the C,L,S,U,E…
The Five-hundred-meter Aperture Spherical radio Telescope (FAST) has been running for several years. A new Ultra-Wide Bandwidth (UWB) receiver, simultaneously covering 500-3300 MHz, has been mounted in the FAST feed cabin and passed a…
Developing schemes for efficient and broad-band frequency conversion of quantum signals is an ongoing challenge in the field of modern quantum information. Especially the coherent conversion between microwave and optical signals is an…
Despite considerable advancements, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) channels remain largely limited to power applications below 650 V. For higher power demands, the ultra-wide bandgap semiconductor…
Ultra strong coupling is studied in a modulation-doped parabolic potential well coupled to an inductance-capacitance resonant circuit. In this system, in accordance to Kohn's theorem, strong reduction of the energy level separation caused…
Recent progress in the synthesis of highly stable, eco-friendly, cost-effective transition metal-dichalcogenides (TMDC) quantum dots (QDs) with their broadband absorption spectrum and wavelength selectivity features have led to their…
In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflective aluminum (Al) layers can be used for hole injection into…
Bilayer graphene field-effect transistors (BLG-FETs), unlike conventional semiconductors, are greatly sensitive to potential fluctuations due to the charged impurities in high-k gate stacks since the potential difference between two layers…
We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The GKTFET consists of a sequence of angled graphene p-n…