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The two-dimensional transition-metal dichalcogenides (2D TMDCs) are an intriguing platform for studying light-matter interactions because they combine the electronic properties of conventional semiconductors with the optical resonances…
Superconducting resonators with high-kinetic inductance play a central role in hybrid quantum circuits, enabling strong coupling with quantum systems with small electric dipole moment and improved parametric amplification. However,…
Spatial and contextual awareness has the potential to revolutionize sensor nodes, enabling spatially augmented data collection and location-based services. With its high bandwidth, superior energy efficiency, and precise time-of-flight…
This work reports on the modeling, fabrication, and experimental characterization of a 13 GHz 30% Scandium-doped Aluminum Nitride (ScAlN) Overmoded Bulk Acoustic Resonator (OBAR) for high-frequency Radio Frequency (RF) applications, notably…
Boron in MgB_2 forms layers of honeycomb lattices with magnesium as a space filler. Band structure calculations indicate that Mg is substantially ionized, and the bands at the Fermi level derive mainly from B orbitals. Strong bonding with…
To date, no electro-optic platform enables devices with high bandwidth, small footprint, and low power consumption, while also enabling mass production. Here we demonstrate high-yield fabrication of high-speed graphene electro-absorption…
We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility…
The high kinetic inductance offered by granular aluminum (grAl) has recently been employed for linear inductors in superconducting high-impedance qubits and kinetic inductance detectors. Due to its large critical current density compared to…
A model of the CW high-power transmitter, utilizing frequency-locked magnetrons with a phase control studied initially as a prototype of controllable in phase and power an RF source for intensity-frontier superconducting linacs, was…
Scaling is now a key challenge in superconducting quantum computing. One solution is to build modular systems in which smaller-scale quantum modules are individually constructed and calibrated, and then assembled into a larger architecture.…
In this study the MOCVD growth and electrical properties of N-polar modulation doped p-AlGaN/GaN superlattices (SLs) were investigated. Hole sheet charge density and mobility were studied as a function of the concentration of the p-type…
Ultra-wide-band-gap (UWBG) semiconductors have tremendous potential to advance electronic devices as device performance improves superlinearly with increasing gap. Ambipolar doping, however, has been a major challenge for UWBG materials as…
We demonstrate a suspended thin-film aluminum nitride (AlN) microbolometer for narrowband very long-wave infrared detection. The device uses a 100-nm-thick AlN membrane suspended above a Pt back reflector by a 1-um air gap. Resonant…
Recently, a honeycomb borophene was reported to grow successfully on Al(111) surface. Since the metallic $\sigma$-bonding bands of honeycomb boron sheet play a crucial role in the 39 K superconductivity of MgB$_2$, it is physically…
With the advantages of large electro-optical coefficient, wide transparency window, and strong optical confinement, thin-film lithium niobate (TFLN) technique has enabled the development of various high-performance optoelectronics devices,…
We investigated the suitability of AlN as a buffer layer for NbN superconducting nanowire single-photon detectors (SNSPDs) on GaAs. The NbN films with a thickness of 3.3 nm to 20 nm deposited onto GaAs substrates with AlN buffer layer,…
Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an outstanding…
As electricity grids become more renewable energy-compliant, there will be a need for novel semiconductors that can withstand high power, high voltage, and high temperatures. Wide band gap (WBG) semiconductors tend to exhibit large…
A robust power gating design using Graphene Nano-Ribbon Field Effect Transistors (GNRFET) is proposed using 16nm technology. The Power Gating (PG) structure is composed of GNRFET as a power switch and MOS power gated module. The proposed…
We present a Rydberg atom-based microwave electric field sensor that achieves extended dynamic range and enhanced sensitivity across a broad bandwidth. By characterizing the Autler-Townes (AT) splitting induced by a single-tone microwave…