Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an outstanding performance combined together with low cost and high flexibility can be obtained using a System-in-a-Package (SIP) approach. Since thermal management is extremely important for these high power applications, a hybrid integration of the HEMT onto an AlN carrier substrate is proposed. In this study we investigate the temperature performance for AlGaN/GaN HEMTs integrated onto AlN using flip-chip mounting. Therefore, we use thermal simulations in combination with experimental results using micro-Raman spectroscopy and electrical dc-analysis.
@article{arxiv.0709.1868,
title = {A Temperature Analysis of High-power AlGaN/GaN HEMTs},
author = {J. Das and H. Oprins and H. Ji and A. Sarua and W. Ruythooren and J. Derluyn and M. Kuball and M. Germain and G. Borghs},
journal= {arXiv preprint arXiv:0709.1868},
year = {2007}
}
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