Related papers: High Breakdown Field Multi-kV UWBG AlGaN Transisto…
We are using "broadband" (4.6 to 43 GHz) multi-frequency VLBA polarization observations of compact AGN to investigate the 3-D structure of their jet magnetic (B) fields. Observing at several frequencies, separated by short and long…
We investigate the influence of AlN buffer thickness on the structural, electrical, and thermal properties of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on semi-insulating SiC substrates by metal-organic chemical vapor…
We investigate strategies to suppress phase separation and reduce threading dislocation densities (TDD) in AlGaInAs compositionally graded buffers (CGBs) that span the lattice constant range from GaAs to InP. Combining results from high…
We report bilayer-graphene field effect transistors operating as THz broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity $\sim 1.2V/W (1.3…
We fabricate AlGaN nanowires by molecular beam epitaxy and we investigate their field emission properties by means of an experimental setup using nano-manipulated tungsten tips as electrodes, inside a scanning electron microscope. The…
Tunable, low-loss, narrowband, and frequency-stabilized filters play a critical role in the realization of transceivers for efficient signal processing in telecommunications and sensing applications in the presence of strong interference…
A superconducting transmon qubit resilient to strong magnetic fields is an important component for proposed topological and hybrid quantum computing (QC) schemes. Transmon qubits consist of a Josephson junction (JJ) shunted by a large…
The performance of ultra-wide band gap materials like $\beta$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate…
Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas et al. Appl. Phys. Lett. 103, 251605 (2013)] we investigate structural, electronic and vibrational properties of bulk, bilayer and…
The development of high gradient accelerating structures is one of the leading activities of the accelerator community. In the technological research of new construction methods for these devices, high-power testing is a critical step for…
We have fabricated suspended few layer (1-3 layers) graphene nanoribbon field effect transistors from unzipped multiwall carbon nanotubes. Electrical transport measurements show that current-annealing effectively removes the impurities on…
We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record low contact resistivity of 1.4 x 10-6 Ohm.cm2 was reported on…
The integration of ferroelectrics that exhibit high dielectric, piezoelectric, and thermal susceptibilities with the mainstream semiconductor industry will enable novel device types for widespread applications, and yet there are few…
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire…
We report Beta-AlGaO/Ga2O3 tri-gate heterostructure MOSHEMTs incorporating a thin 5 nm Al2O3 gate oxide layer for improved gate control and reduced leakage. The devices were fabricated on AlGaO/GaO heterostructures grown by ozone MBE on…
Thin-film lithium niobate (TFLN) has emerged as a leading platform for large-scale programmable photonic circuits for quantum and classical applications. As circuits scale in complexity, low-loss routing of broadband pump and signal fields…
The spectral characteristics of a fiber Bragg grating (FBG) with a transversely inhomogeneous refractive index profile, differs con- siderably from that of a transversely uniform one. Transmission spectra of inhomogeneous and asymmetric…
Aluminum nitride (AlN) has been widely used in microeletromechanical resonators for its excellent electromechanical properties. Here we demonstrate the use of AlN as an optomechanical material that simultaneously offer low optical and…
By exploiting singular spatial modulations of the graphene conductivity, we design a broadband, tunable THz absorber whose efficiency approaches the theoretical upper bound for a wide absorption band with a fractional bandwidth of 185\%.…
Ultra-wide bandgap (UWBG) semiconductors are poised to transform power electronics by surpassing the capabilities of established wide bandgap materials, such as GaN and SiC, owing to their capability to operate at higher voltage, frequency,…