Related papers: High Breakdown Field Multi-kV UWBG AlGaN Transisto…
We demonstrate graded AlGaN/GaN heterojunction bipolar transistors (HBTs) with selective injection of minority carriers across a p-GaN base and patterned regrown base contacts. The selective injection design regulates minority carrier…
A dual-gate graphene field-effect transistors is presented, which shows improved RF performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm2/Vs, a cutoff frequency of 50 GHz is…
The biphenylene network (BPN) is a notable achievement in recent fabrication endeavors for conceiving new 2D materials. The stability of its boron nitride counterpart, BN-BPN, has been confirmed through numerical investigations. In this…
High-efficient heat dissipation plays critical role for high-power-density electronics. Experimental synthesis of ultrahigh thermal conductivity boron arsenide (BAs, 1300 W m-1K-1) cooling substrates into the wide-bandgap semiconductor of…
We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned…
Mechanical transfer of high performing thin film devices onto arbitrary substrates represents an exciting opportunity to improve device performance, explore non-traditional manufacturing approaches, and paves the way for soft, conformal,…
This paper reports an 11.7 GHz compact 50 ohm ladder filter based on single layer Scandium Aluminum Nitride (ScAlN) film bulk acoustic resonators (FBARs) with platinum (Pt) electrodes, and uses it as a quantitative case study of the limits…
Aluminum scandium nitride (AlScN) is a promising barrier material for gallium nitride (GaN)-based transistors for the next generation of radio-frequency electronic devices. In this work, we examine the transport properties of two…
Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low…
As UV LEDs are explored at shorter wavelengths (< 280 nm) into the UVC spectral range, the crystalline quality of epitaxial AlGaN films with high Al compositions and inefficient hole injection from p-type AlGaN severely limit the LED…
This paper presents a low power, low cost transceiver architecture to implement radar-on-a-chip. The transceiver comprises of a full ultra-wideband (UWB) transmitter and a full UWB band receiver. A design methodology to maximize the tuning…
High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the…
In this article, high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 \Omega / \Box ) is reported. Optimization of growth conditions, such as…
The microscale integration of mid- and longwave-infrared photonics could enable the development of fieldable, robust chemical sensors, as well as highly efficient infrared frequency converters. However, such technology would be defined by…
This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area…
Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…
Recently the small-twist-angle (< 2{\deg}) bilayer graphene has received extraordinary attentions due to its exciting physical properties. Compared with monolayer graphene, the Brillouin zone folding in twisted bilayer graphene (TBG) leads…
A highly-efficient multi-resonant RF energy-harvesting rectenna based on a metamaterial perfect absorber featuring closely-spaced polarization-independent absorption modes is presented. Its effective area is larger than its physical area,…
While on the one hand 5G and B5G networks are challenged by ultra-high data rates in wideband applications like 100+ Gbps wireless Internet access, on the other hand they are expected to support reliable low-latency Internet of Things (IoT)…
We describe the high fidelity dispersive measurement of a superconducting qubit using a microwave amplifier based on the Superconducting Low-inductance Undulatory Galvanometer (SLUG). The SLUG preamplifier achieves gain of 19 dB and yields…