Related papers: The completed High-Low method for interface state …
We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped…
The manufacturing cost of quantum cascade lasers is still a major bottleneck for the adoption of this technology for chemical sensing. The integration of Mid-Infrared sources on Si substrate based on CMOS technology paves the way for…
Organic dopants are frequently used to surface-dope inorganic semiconductors. The resulted hybrid inorganic-organic materials have a crucial role in advanced functional materials and semiconductor devices. In this article, we study charge…
This article presents several design techniques to fabricate micro-electro-mechanical systems (MEMS) using standard complementary metal-oxide semiconductor (CMOS) processes. They were applied to fabricate high yield CMOS-MEMS shielded…
We have used a field-penetration method to measure thermodynamic compressibility of a moderately interacting two-dimensional electron system ($r_{s}$ $\approx$ 0.5-3) in a three terminal GaAs/AlGaAs device, fabricated with an epitaxial…
Intelligent reflecting surface (IRS) is a promising solution to enhance the wireless communication capacity both cost-effectively and energy-efficiently, by properly altering the signal propagation via tuning a large number of passive…
We introduce an adhesion parameter that enables rapid screening for materials interfaces with high adhesion. This parameter is obtained by density functional theory calculations of individual single-material slabs rather than slabs…
An analytical solution to the nonlinear Poisson equation governing the inversion layer in metal-oxide-semiconductor (MOS) structures has recently been obtained, resolving a fundamental challenge in semiconductor theory first identified in…
In Keck HIRES spectra of 9 QSOs we identify a sample of 908 CIV absorber components in 188 systems outside the Lyman forest in the redshift range 1.6 < z < 4.4, with related lines of SiIV, CII, SiII and NV. The properties of the CIV…
Molecules dominate the cooling function of neutral metal-poor gas at high density. Observation of molecules at high redshift is thus an important tool toward understanding the physical conditions prevailing in collapsing gas. Up to now,…
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric…
Density functional theory (DFT) has greatly expanded our ability to affordably compute and understand electronic ground states, by replacing intractable {\em ab initio} calculations by models based on paradigmatic physics from high- and…
In this paper, we demonstrate the principle of operation of a metal-insulator-semiconductor (MIS) capacitor based on undoped organic semiconductor. In spite of low charge concentration within the semiconductor, this device exhibits a…
We propose the atomic structures of the 4H-SiC/SiO$_2$ interface for the $a$, $m$, C, and Si faces after NO annealing. Our proposed structures preferentially form at the topmost layers of the SiC side of the interface, which agrees with the…
The integrated density of states (IDS) is a fundamental spectral quantity for quantum Hamiltonians modeling condensed matter systems, describing how densely energy levels are distributed. It can be interpreted as a volume-averaged spectral…
Band offsets at semiconductor-oxide interfaces are determined through a scheme based on hybrid density functionals, which incorporate a fraction $\alpha$ of Hartree-Fock exchange. For each bulk component, the fraction $\alpha$ is tuned to…
We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts.…
Entropy governs molecular self-assembly, phase transitions, and material stability, yet remains challenging to quantify and directly control in molecular systems. Here, we demonstrate that the computable information density (CID), a data…
The frequency scarcity imposed by fast growing demand for mobile data service requires promising spectrum aggregation systems. The so-called higher-order statistics (HOS) of the channel capacity is a suitable metric on the system…
Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here we employ a simple and scalable material system of conductive oxide…