In this paper, we demonstrate the principle of operation of a metal-insulator-semiconductor (MIS) capacitor based on undoped organic semiconductor. In spite of low charge concentration within the semiconductor, this device exhibits a capacitance variation with respect to applied gate voltage Vg, resembling the capacitance-voltage C-V characteristics of a traditional doped semiconductor based MIS capacitor. A physics based model is developed to derive charge concentration, surface potential ψs and the capacitance of organic MIS capacitor. The model is validated with TCAD simulation results and is further verified with experimental results obtained from fabricated organic MIS capacitor consisting of poly(4-vinylphenol) and poly(3-hexylthiophene-2,5-diyl) as insulator and semiconductor, respectively.
@article{arxiv.1810.12120,
title = {Modeling of Organic Metal-Insulator-Semiconductor Capacitor},
author = {Prashanth Kumar Manda and Logesh Karunakaran and Sandeep Thirumala and Anjan Chakravorty and Soumya Dutta},
journal= {arXiv preprint arXiv:1810.12120},
year = {2019}
}