Related papers: The completed High-Low method for interface state …
The ability to gate-induce superconductivity by electrostatic charge accumulation is a recent breakthrough in physics and nano-electronics. With the exception of LaAlO$_3$/SrTiO$_3$ interfaces, experiments on gate-induced superconductors…
A high-modulation-efficiency optical modulator integrated on silicon (Si) is a key enabler for low-power and high-capacity optical interconnects. However, Si-based optical modulators suffer from low phase modulation efficiency owing to the…
Amorphous oxide semiconductors (AOSs) have recently gained attention as a promising channel material of back-end-of-line (BEOL)-compatible transistors for monolithic three-dimensional (3D) integrations. However, the degradation in device…
We revisit the compositeness theorem proposed by Weinberg in an effective field theory (EFT) and explore criteria which are sensitive to the structure of $S$-wave threshold states. On a general basis, we show that the wave function…
- Paper withdrawn by the author - CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications…
Lattice Boltzmann simulations of liquid-gas systems are believed to be restricted to modest density ratios of less than 10. In this article we show that reducing the speed of sound and, just as importantly, the interfacial contributions to…
We have analysed a large data set of OVI absorber candidates found in the spectra of 3702 SDSS quasars, focusing on a subsample of 387 AGN sightlines with an average S/N>5.0, allowing for detection of absorbers above rest-frame equivalents…
Computational studies of electrochemical interfaces based on density-functional theory (DFT) play an increasingly important role in present research on electrochemical processes for energy conversion and storage. The homogeneous background…
The performance of n-type amorphous oxide semiconductor thin-film transistors (TFTs) is largely controlled by the density of states (DoS) near the conduction band mobility edge. Here, the full subgap DoS of amorphous InGaZnO (a-IGZO) TFTs,…
Isolated oxygen impurities and fully oxidized structures of four stable two-dimensional (2D) SiS structures are investigated by {\em ab initio} density functional calculations. Binding energies of oxygen impurities for all the four 2D SiS…
This paper proposes a comparison of four popular interface capturing methods : the volume of fluid (VOF), the standard level set (SLS), the accurate conservative level set (ACLS) and the coupled level set and volume of fluid (CLSVOF). All…
We present a survey for low-ionization metal absorption line systems towards 17 QSOs at redshifts z_em=5.8-6.4. Nine of our objects were observed at high resolution with either Keck/HIRES or Magellan/MIKE, and the remainder at moderate…
In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron…
Extensive theoretical and experimental work has established high-fidelity electron shuttling in Si/SiGe systems, whereas demonstrations in Si/SiO2 (SiMOS) remain at an early stage. To help address this, we perform full 3D simulations of…
A new diffuse interface model has been proposed in this study for simulating binary alloy solidification under universal cooling conditions, involving both equilibrium and non-equilibrium solute partitioning. Starting from the Gibbs-Thomson…
An oversight of several previous results from local density approximation (LDA) calculations appear to have led to an incomplete, and hence misleading, characterization of the capability of density functional theory (DFT) to describe…
The full-duplex (FD) communication can achieve higher spectrum efficiency than conventional half-duplex (HD) communication; however, self-interference (SI) is the key hurdle. This paper is the first work to propose the intelligent Omni…
High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $\beta$-Ga$_2$O$_3$ as a potentially better…
We demonstrate a continuously loaded $^{88}\mathrm{Sr}$ magneto-optical trap (MOT) with a steady-state phase-space density of $1.3(2) \times 10^{-3}$. This is two orders of magnitude higher than reported in previous steady-state MOTs. Our…
Using positive muons as local probes implanted at low energy enables gathering information about the material of interest with nanometer depth resolution (low energy muon spin rotation spectroscopy (LE-$\mu$SR). In this work, we leverage…