Related papers: The completed High-Low method for interface state …
We report the study of metal-STO-metal memristors where the doping concentration in STO can be fine-tuned through electric field migration of oxygen vacancies. In this tunnel junction device, the evolution of the Density Of States (DoS) can…
By considering the quantum-mechanically minimum allowable energy interval, we exactly count number of states (NOS) and introduce discrete density of states (DOS) concept for a particle in a box for various dimensions. Expressions for…
This manuscript investigates the information-theoretic limits of integrated sensing and communications (ISAC), aiming for simultaneous reliable communication and precise channel state estimation. We model such a system with a…
We use the density matrix formalism to analyze the interaction of interferometer-type superconducting qubits with a high quality tank circuit, which frequency is well below the gap frequency of a qubit. We start with the ground state…
The deposition of a thin oxide layer at metal/semiconductor interfaces has been previously reported as a means of reducing contact resistance in 2D electronics. Using X-ray photoelectron spectroscopy with in-situ Ti deposition, we fabricate…
We present a monolithic, microfabricated, metal-oxide semiconductor (MOS) sensor array in conjunction with a machine learning algorithm to determine unique fingerprints of individual gases within homogenous mixtures. The array comprises…
Atomistic density functional theory (DFT) calculations of the capacitance between a metallic cylindric gate and a carbon nanotube (CNT) are reported. Results stressing the predominant effect of quantum capacitance in limiting or even…
In this paper, we consider the weighted sum-power minimization under quality-of-service (QoS) constraints in the multi-user multi-input-single-output (MISO) uplink wireless network assisted by intelligent reflecting surface (IRS). We…
In this paper, we consider the weighted sum-power minimization under quality-of-service (QoS) constraints in the multi-user multi-input-single-output (MISO) uplink wireless network assisted by intelligent reflecting surface (IRS). We…
Oxygen vacancies are increasingly recognized to play a role in phenomena observed at transition-metal oxide interfaces. Here we report a study of SrRuO3/La0.7Sr0.3MnO3 (SRO/LSMO) interfaces using a combination of quantitative…
While 2D materials have enormous potential for future device technologies, many challenges must be overcome before they can be deployed at an industrial scale. One of these challenges is identifying the right semiconductor/insulator…
Mott's metal-insulator transition at an interface due to band bending is studied by the density matrix renormalization group (DMRG). We show that the result can be recovered by a simple modification of the conventional Poisson's equation…
Tailored optical excitations can steer a system along non-equilibrium pathways to metastable states with specific structural or electronic properties. The light-induced hidden state of 1T-TaS$_{2}$, with its strongly enhanced conductivity…
We calculate theoretical population ratios of the ground fine-structure levels of some atoms/ions which typically exhibit UV lines in the spectra of QSO absorbers redward the Ly-alpha forest: C0, C+, O0, Si+ and Fe+. The most reliable…
3D DRAM has emerged as a promising approach for continued density scaling, but its viability is limited by routing and hybrid bonding constraints to periphery, which may degrade sensing margin, latency, and array efficiency. With device…
Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior remains limited. In this work, we investigate…
STIS Echelle observations at a resolution of 10 km/s and UVES/VLT spectroscopy at a resolution of 7 km/s of the luminous QSO HE 0515-4414 (z_em = 1.73, B = 15.0) reveal four intervening O VI absorption systems in the redshift range 1.2 <…
Metal oxide thin-film transistors are fast becoming a ubiquitous technology for application in driving backplanes of organic light-emitting diode displays. Currently all commercial products rely on metal oxides processed via physical vapor…
We theoretically investigate a two-dimensional heterostructure composed of a topological insulator (TI) and a Mott insulator (MI), and clarify what kind of electronic states can be realized at the interface. By using inhomogeneous dynamical…
Understanding interface properties in MoS2 field effect transistors with a high-k gate insulator is critical for improving the performance of the device. Here, by applying the time domain charge pumping method, the elementary process for…