Interfaces of correlated electron systems: Proposed mechanism for colossal electroresistance
Strongly Correlated Electrons
2009-11-11 v2
Abstract
Mott's metal-insulator transition at an interface due to band bending is studied by the density matrix renormalization group (DMRG). We show that the result can be recovered by a simple modification of the conventional Poisson's equation approach used in semi-conductor heterojunctions. A novel mechanism of colossal electroresistance is proposed, which incorporates the hysteretic behavior of the transition in higher dimensions.
Keywords
Cite
@article{arxiv.cond-mat/0509050,
title = {Interfaces of correlated electron systems: Proposed mechanism for colossal electroresistance},
author = {Takashi Oka and Naoto Nagaosa},
journal= {arXiv preprint arXiv:cond-mat/0509050},
year = {2009}
}
Comments
5 pages, 3 figures, title changed