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We use the tip of an atomic force microscope (AFM) to charge floating metallic gates defined on the surface of a Si/SiGe heterostructure. The AFM tip serves as an ideal and movable cryogenic switch, allowing us to bias a floating gate to a…
Characterizing long-range electric fields and built-in potentials in functional materials at nano- to micrometer scales is of supreme importance for optimizing devices. E.g., the functionality of semiconductor heterostructures or battery…
We present a reliable flip-chip technique for dual-side processing of thin (<1 micron) high-mobility GaAs/AlGaAs epitaxial layers. The technique allows the fabrication of small (micron-scale with standard UV photolithography) patterned back…
Resonant cavities with high quality factor and small mode volume provide crucial enhancement of light-matter interactions in nanophotonic devices that transport and process classical and quantum information. The production of functional…
In circuit-based quantum computing, the available gate set typically consists of single-qubit gates acting on each individual qubit and at least one entangling gate between pairs of qubits. In certain physical architectures, however, some…
A key requirement to perform simulations of large quantum systems on near-term quantum hardware is the design of quantum algorithms with short circuit depth that finish within the available coherence time. A way to stay within the limits of…
In situ scanning transmission electron microscopy enables observation of the domain dynamics in ferroelectric materials as a function of externally applied bias and temperature. The resultant data sets contain a wealth of information on…
Strongly correlated materials that exhibit an insulator-metal transition are key candidates in the search for new computing platforms. Understanding the pathways and timescales underlying the electrically-driven insulator-metal transition…
To realize fault-tolerant quantum computing, it is necessary to store quantum information in logical qubits with error correction functions, realized by distributing a logical state among multiple physical qubits or by encoding it in the…
Modulating the electric potential on a conducting electrode is presented to generate an optical contrast for scattering microscopy that is sensitive to both surface charge and local topography. We dub this method…
We explore solid electrolytes for electrostatic gating using field-effect transistors (FETs) in which thin WSe$_2$ crystals are exfoliated and transferred onto a lithium-ion conducting glass ceramic substrate. For negative gate voltages…
In scanning gate microscopy, where the tip of a scanning force microscope is used as a movable gate to study electronic transport in nanostructures, the shape and magnitude of the tip-induced potential are important for the resolution and…
We explore the coherent transfer of electronic signatures from a strongly correlated, optically gated nanoscale quantum dot to a weakly interacting, electrically backgated microscale channel. In this unique side-coupled `T' geometry for…
We consider the full nonequilibrium response of a mesoscopic capacitor in the large transparency limit, exactly solving a model with electron-electron interactions appropriate for a cavity in the quantum Hall regime. For a cavity coupled to…
We report the magneto-transport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magneto-resistance and a…
As first demonstrated by Hanbury Brown and Twiss, it is possible to observe interference between independent light sources by measuring correlations in their intensities rather than their amplitudes. In this work, we apply this concept of…
Electrostatic gating is essential for defining and control of semiconducting devices. However, nano-fabrication processes required for depositing gates inevitably degrade the pristine quality of the material of interest. Examples of…
A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes,…
We demonstrate a scanning gate grid measurement technique consisting in measuring the conductance of a quantum point contact (QPC) as a function of gate voltage at each tip position. Unlike conventional scanning gate experiments, it allows…
We report the construction of a passive, deterministic and near-unity-fidelity controlled-$\pi$-phase gate for single-photon wavepackets with a node comprising a two-level emitter and a small number of cavities. The proposed gate is rooted…