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A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate…
Recent advances in optical simulation and computational techniques have renewed interest in high-finesse optical cavities for applications such as enhancing light-matter interactions, engineering complex photonic band structures, and…
Guided-wave plasmonic circuits are promising platforms for sensing, interconnection, and quantum applications in the sub-diffraction regime. Nonetheless, the loss-confinement trade-off remains a collective bottleneck for plasmonic-enhanced…
We demonstrate fast polarisation and path control of photons at 1550 nm in lithium niobate waveguide devices using the electro-optic effect. We show heralded single photon state engineering, quantum interference, fast state preparation of…
In this work a combination of an ionization chamber with one-dimensional spatial resolution and a MicroCAT structure will be presented. The combination between gas gain operations and integrating front-end electronics yields a dynamic range…
Characterizing and controlling the out-of-equilibrium state of nanostructured Mott insulators hold great promises for emerging quantum technologies while providing an exciting playground for investigating fundamental physics of…
Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are grounded. The emitted photons are caused by defect-assisted…
The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical…
Using the tip of a scanning probe microscope as a local electrostatic gate gives access to real space information on electrostatics as well as charge transport at the nanoscale, provided that the tip-induced electrostatic potential is well…
Optoelectronic measurements of carbon nanotube transistors have shown a wide variety of sensitivites to the incident light. Direct photocurrent processes compete with a number of extrinsic mechanisms. Here we show that visible light…
Electrostatic modification of functional materials by electrolytic gating has demonstrated a remarkably wide range of density modulation, a condition crucial for developing novel electronic phases in systems ranging from complex oxides to…
Triggered, indistinguishable, single photons play a central role in various quantum photonic implementations. Here, we realize a novel n$^+-$i$-$n$^{++}$ diode structure embedding semiconductor quantum dots: the gated device enables…
Nanoscale optoelectronic components achieve functionality via spatial variation in electronic structure induced by composition, defects, and dopants. To dynamically change the local band alignment and influence defect states, a scanning…
We use Scanning Gate Microscopy to study electron transport through an open, gate-defined resonator in a Ga(Al)As heterostructure. Raster-scanning the voltage-biased metallic tip above the resonator, we observe distinct conductance…
Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the…
Hyperparallel quantum information processing outperforms its traditional parallel one in terms of channel capacity, low loss rate, and processing speed. We present a way for implementing a robust hyper-parallel optical controlled-phase-flip…
We propose a scheme to realize controlled phase gate between two single photons through a single quantum dot in slow-light silicon photonic crystal waveguide. Enhanced Purcell factor and beta factor lead to high gate fidelity over broadband…
We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO$_3$/SrTiO$_3$ as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale…
We demonstrate an all solid state semiconductor device, based on epitaxial single crystalline metal halide perovskites, enabling reversible control of a perovskite photoluminescence with a gate voltage. Fundamentally distinct from…
We study a holographic model in which the striped structure of charge density is spontaneously formed over an ionic lattice which breaks the translational symmetry explicitly. The effect of commensurate lock-in between the spontaneous…