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Achieving spatiotemporal control of light at high-speeds presents immense possibilities for various applications in communication, computation, metrology, and sensing. The integration of subwavelength metasurfaces and optical waveguides…
Perovskite solar cells are notorious for exhibiting transient behaviour not seen in conventional inorganic semiconductor devices. Significant inroads have been made into understanding this fact in terms of rapid ion migration, now a…
Topological insulators (TIs) have attracted much attention due to their spin-polarized surface and edge states, whose origin in symmetry gives them intriguing quantum-mechanical properties. Robust control over the chemical potential of TI…
We observed qualitatively dissimilar frequency dependence of negative capacitive response under high charge injection in two sets of junction diodes which are functionally different from each other i.e. electroluminescent diodes and…
Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We…
We show that scanning gate microscopy can be used for probing electron-electron interactions inside a nanostructure. We assume a simple model made of two non-interacting strips attached to an interacting nanosystem. In one of the strips,…
The Si/SiO$_2$ interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic…
Programmable integrated photonics aims to replicate the versatility of field-programmable gate arrays in the optical domain. However, scaling these systems has been prevented by the high power consumption and thermal crosstalk of…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
We propose a scalable design of entangling quantum gates for large ion crystals with the following desirable features: 1) The gate design is universal and applicable for large ion crystals of arbitrary sizes; 2) The gate has no speed…
The disordered potential landscape in an InGaAs/InAlAs two-dimensional electron gas patterned into narrow wires is investigated by means of scanning gate microscopy. It is found that scanning a negatively charged tip above particular sites…
We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts.…
Tailored electrostatic potentials are the foundation of scanning gate microscopy. We present several aspects of the tip-induced potential on the two-dimensional electron gas. First, we give methods on how to estimate the size of the…
The engineering of localised modes in photonic structures is one of the main targets of modern photonics. An efficient strategy to design these modes is to use the interplay of constructive and destructive interference in periodic photonic…
Silicon offers an attractive material platform for hardware realization of quantum computing. In this study, a microscopic stochastic simulation method is developed to model the effect of random interface charge traps in silicon…
High-fidelity quantum gates require precise classical control signals, yet the analog hardware delivering these signals introduces nonlinear distortions that degrade gate performance. We demonstrate digital predistortion of an acousto-optic…
The capacitance and differential conductance of MBE-grown AlGaAs/GaAs p-i-n diodes are investigated. In these diodes, the p-doped layer, an adjacent intrinsic spacer, and a central barrier are made of AlGaAs. Capacitance oscillations and…
When subject to a non-local unitary evolution, qubits in a quantum circuit become increasingly entangled. Conversely, measurements applied to individual qubits lead to their disentanglement from the collective system. The extent of…
Gate controllable electronic trap detection method has been demonstrated by regulating the gate potential of MIS devices. This method is based on shift of capacitance voltage (CV) curve as well as flatband voltage (VFB) measure in less than…
We use Scanning Gate Microscopy to demonstrate the presence of localized states arising from potential inhomogeneities in a 50nm-wide, gate-defined conducting channel in encapsulated bilayer graphene. When imaging the channel conductance…