In Situ Treatment of a Scanning Gate Microscopy Tip

A. E. Gildemeister; T. Ihn; M. Sigrist; K. Ensslin; D. C. Driscoll; A. C. Gossard

doi:10.1063/1.2742314

In Situ Treatment of a Scanning Gate Microscopy Tip

Mesoscale and Nanoscale Physics 2009-11-13 v2 Instrumentation and Detectors

Authors: A. E. Gildemeister , T. Ihn , M. Sigrist , K. Ensslin , D. C. Driscoll , A. C. Gossard

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Abstract

In scanning gate microscopy, where the tip of a scanning force microscope is used as a movable gate to study electronic transport in nanostructures, the shape and magnitude of the tip-induced potential are important for the resolution and interpretation of the measurements. Contaminations picked up during topography scans may significantly alter this potential. We present an in situ high-field treatment of the tip that improves the tip-induced potential. A quantum dot was used to measure the tip-induced potential.

Keywords

scanning gate microscopy tip-induced potential in situ treatment quantum dot scanning force microscope electronic transport

Cite

@article{arxiv.cond-mat/0703605,
  title  = {In Situ Treatment of a Scanning Gate Microscopy Tip},
  author = {A. E. Gildemeister and T. Ihn and M. Sigrist and K. Ensslin and D. C. Driscoll and A. C. Gossard},
  journal= {arXiv preprint arXiv:cond-mat/0703605},
  year   = {2009}
}

Comments

3 pages, 1 figure, minor changes to fit published version

In Situ Treatment of a Scanning Gate Microscopy Tip

Abstract

Keywords

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