Related papers: NAND-like SOT-MRAM-based Approximate Storage for E…

Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the…

We present a novel design of a strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell comprising a piezoelectric/magnet (gating)/topological insulator (TI)/magnet (storage) heterostructure that leverages…

One of the most exciting applications of Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) is the in-memory implementation of deep neural networks, which could allow improving the energy efficiency of Artificial Intelligence by…

Prior studies have shown that the retention time of the non-volatile spin-transfer torque RAM (STT-RAM) can be relaxed in order to reduce STT-RAM's write energy and latency. However, since different applications may require different…

Analog electronic non-volatile memories mimicking synaptic operations are being explored for the implementation of neuromorphic computing systems. Compound synapses consisting of ensembles of stochastic binary elements are alternatives to…

Sub/Near-threshold static random-access memory (SRAM) design is crucial for addressing the memory bottleneck in energy-constrained applications. However, the high integration density and reliability under process variations demand an…

Progress in artificial intelligence and machine learning over the past decade has been driven by the ability to train larger deep neural networks (DNNs), leading to a compute demand that far exceeds the growth in hardware performance…

Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility, low leakage power, high density, and fast read speed. The STT-RAM's small feature size is…

In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…

The SRAM cell is made up of latch, which ensures that the cell data is preserved as long as power is turned on and refresh operation is not required for the SRAM cell. SRAM is widely used for on-chip cache memory in microprocessors, game…

Optimal Transport (OT) naturally arises in many machine learning applications, yet the heavy computational burden limits its wide-spread uses. To address the scalability issue, we propose an implicit generative learning-based framework…

We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes,…

Perceiving and mapping the surroundings are essential for enabling autonomous navigation in any robotic platform. The algorithm class that enables accurate mapping while correcting the odometry errors present in most robotics systems is…

A damping-like spin orbit torque (SOT) is a prerequisite for ultralow power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition metal dichalcogenide (TMD) TaS$_2$ interfaced with a…

Non-volatile memristors offer a salient platform for artificial neural network (ANN), but the integration of different function blocks into one hardware system remains challenging. Here we demonstrate the implementation of brain-like…

Non-Intrusive Load Monitoring (NILM) enables the disaggregation of the global power consumption of multiple loads, taken from a single smart electrical meter, into appliance-level details. State-of-the-Art approaches are based on Machine…

Write asymmetry, the significantly different write current for high-to-low and low-to-high resistance switching because of natural stochastic behaviors of magnetization, is a fundamental issue in magnetic random-access memory (MRAM). For…

Although we may be at the end of Moore's law, lowering chip power consumption is still the primary driving force for the designers. To enable low-power operation, we propose a resonant energy recovery static random access memory (SRAM). We…

Solid-state storage architectures based on NAND or emerging memory devices (SSD), are fundamentally architected and optimized for both reliability and performance. Achieving these simultaneous goals requires co-design of memory components…

As one of the most promising emerging non-volatile memory (NVM) technologies, spin-transfer torque magnetic random access memory (STT-MRAM) has attracted significant research attention due to several features such as high density, zero…