Related papers: NAND-like SOT-MRAM-based Approximate Storage for E…

Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy-efficiency. It is of particular interest to develop an SOT-MRAM device…

Non-volatile Neuromorphic Computing (NC) elements utilizing Spin Orbit Torque (SOT) provide a viable solution to alleviate the memory wall bottleneck in contemporary computing systems. However, the two challenges, low SOT efficiency and the…

We propose an analog implementation of the transcendental activation function leveraging two spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and a CMOS inverter. The proposed analog neuron circuit consumes 1.8-27x…

In this work, we present a novel non-volatile spin transfer torque (STT) assisted spin-orbit torque (SOT) based ternary content addressable memory (TCAM) with 5 transistors and 2 magnetic tunnel junctions (MTJs). We perform a comprehensive…

This paper addresses a novel five-transistor (5T) CMOS SRAM design with high performance and reliability in 65nm CMOS, and illustrates how it reduces the dynamic power consumption in comparison with the conventional and low-power 6T SRAM…

Bit truncation has demonstrated great potential to enable run-time quality-power adaptive data storage, thereby optimizing the power/energy efficiency of approximate applications and supporting their deployment in edge environments.…

SoCs are now designed with their own AI accelerator segment to accommodate the ever-increasing demand of Deep Learning (DL) applications. With powerful MAC engines for matrix multiplications, these accelerators show high computing…

In this paper, spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices are leveraged to realize sigmoidal neurons and binarized synapses for a single-cycle analog in-memory computing (IMC) architecture. First, an analog…

On-chip memory (usually based on Static RAMs-SRAMs) are crucial components for various computing devices including heterogeneous devices, e.g., GPUs, FPGAs, ASICs to achieve high performance. Modern workloads such as Deep Neural Networks…

Non-volatile memory (NVM) technologies such as spin-transfer torque magnetic random access memory (STT-MRAM) and spin-orbit torque magnetic random access memory (SOT-MRAM) have significant advantages compared to conventional SRAM due to…

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and…

The excellent performance of modern deep neural networks (DNNs) comes at an often prohibitive training cost, limiting the rapid development of DNN innovations and raising various environmental concerns. To reduce the dominant data movement…

Multilayered artificial neural networks (ANN) have found widespread utility in classification and recognition applications. The scale and complexity of such networks together with the inadequacies of general purpose computing platforms have…

Spin Orbit Torque-Magnetic Random Access Memory (SOT-MRAM) is being developed as a successor to the Spin transfer torque MRAM (STT-MRAM) owing to its superior performance on the metrics of reliability and read-write speed. SOT switching of…

A Compressive Sensing (CS) approach is applied to utilize intrinsic computation capabilities of Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) devices for IoT applications wherein lifetime energy, device area, and manufacturing…

Spin-orbit torque (SOT) enables ultra-fast, energy-efficient magnetization switching, making it a promising mechanism for introducing MRAMs for cache memory applications. However, current SOT-MRAM devices face write efficiency limitations,…

Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer…

We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below…

Standard Transformers impose near-exponential decay on the influence of distant tokens, conflicting with the power-law structure of long-range dependencies in natural language. We introduce the \emph{Variable-Order Retention Transformer}…

The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic…