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Magnetoresistive random access memory (MRAM) technologies with thermally unstable nanomagnets are leveraged to develop an intrinsic stochastic neuron as a building block for restricted Boltzmann machines (RBMs) to form deep belief networks…

We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…

Despite huge success of artificial intelligence, hardware systems running these algorithms consume orders of magnitude higher energy compared to the human brain, mainly due to heavy data movements between the memory unit and the computation…

The superior density of passive analog-grade memristive crossbars may enable storing large synaptic weight matrices directly on specialized neuromorphic chips, thus avoiding costly off-chip communication. To ensure efficient use of such…

Surface mount technology (SMT) is an enhanced method in electronic packaging in which electronic components are placed directly on soldered printing circuit board (PCB) and are permanently attached on PCB with the aim of reflow soldering…

As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…

In this paper, we propose an efficient predefined structured sparsity-based ex-situ training framework for a hybrid CMOS-memristive neuromorphic hardware for deep neural network to significantly lower the power consumption and computational…

We demonstrate using micromagnetic simulations that a nanomagnet array excited by Surface Acoustic Waves (SAWs) can work as a reservoir that can classify sine and square waves with high accuracy. To evaluate memory effect and computing…

The inherent safety alignment of Large Language Models (LLMs) is prone to erosion during fine-tuning, even when using seemingly innocuous datasets. While existing defenses attempt to mitigate this via data selection, they typically rely on…

As technology process node scales down, on-chip SRAM caches lose their efficiency because of their low scalability, high leakage power, and increasing rate of soft errors. Among emerging memory technologies, Spin-Transfer Torque Magnetic…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) as one of the most promising replacements for SRAMs in on-chip cache memories benefits from higher density and scalability, near-zero leakage power, and non-volatility, but its reliability is…

Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…

The use of Dynamic Random Access Memory (DRAM) for storing Machine Learning (ML) models plays a critical role in accelerating ML inference tasks in the next generation of communication systems. However, periodic refreshment of DRAM results…

For neuromorphic engineering to emulate the human brain, improving memory density with low power consumption is an indispensable but challenging goal. In this regard, emerging RRAMs have attracted considerable interest for their unique…

A Content Addressable Memory (CAM) is a memory primarily designed for high speed search operation. Parallel search scheme forms the basis of CAM, thus power reduction is the challenge associated with a large amount of parallel active…

Simultaneous localisation and mapping (SLAM) play a vital role in autonomous robotics. Robotic platforms are often resource-constrained, and this limitation motivates resource-efficient SLAM implementations. While sparse visual SLAM…

The performance and efficiency of running large-scale datasets on traditional computing systems exhibit critical bottlenecks due to the existing "power wall" and "memory wall" problems. To resolve those problems, processing-in-memory (PIM)…

Spin-orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next-generation non-volatile magnetoresistive random-access memory (MRAM). It requires a…

We present a design-scheme for ultra-low power neuromorphic hardware using emerging spin-devices. We propose device models for 'neuron', based on lateral spin valves and domain wall magnets that can operate at ultra-low terminal voltage of…

Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage…