Related papers: NAND-like SOT-MRAM-based Approximate Storage for E…
The widespread adoption of data-centric algorithms, particularly Artificial Intelligence (AI) and Machine Learning (ML), has exposed the limitations of centralized processing infrastructures, driving a shift towards edge computing. This…
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…
Charge-domain compute-in-memory (CIM) SRAMs have recently become an enticing compromise between computing efficiency and accuracy to process sub-8b convolutional neural networks (CNNs) at the edge. Yet, they commonly make use of a fixed…
Compute-in-memory (CiM) is a promising approach to improving the computing speed and energy efficiency in dataintensive applications. Beyond existing CiM techniques of bitwise logic-in-memory operations and dot product operations, this…
A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…
Recent advances in machine learning and neuro-inspired systems enabled the increased interest in efficient pattern recognition at the edge. A wide variety of applications, such as near-sensor classification, require fast and low-power…
Persistent Memory (PM) makes possible recoverable applications that can preserve application progress across system reboots and power failures. Actual recoverability requires careful ordering of cacheline flushes, currently done in two…
Due to increasing cache sizes and large leakage consumption of SRAM device, conventional SRAM caches contribute significantly to the processor power consumption. Recently researchers have used non-volatile memory devices to design caches,…
This work investigates a new erase scheme in NAND flash memory to improve the lifetime and performance of modern solid-state drives (SSDs). In NAND flash memory, an erase operation applies a high voltage (e.g., > 20 V) to flash cells for a…
In this paper we consider distributed allocation problems with memory constraint limits. Firstly, we propose a tractable relaxation to the problem of optimal symmetric allocations from [1]. The approximated problem is based on the Q-error…
Extreme edge devices or Internet-of-thing nodes require both ultra-low power always-on processing as well as the ability to do on-demand sampling and processing. Moreover, support for IoT applications like voice recognition, machine…
Compute-in-memory (CIM) presents an attractive approach for energy-efficient computing in data-intensive applications. However, the development of suitable memory designs to achieve high-performance CIM remains a challenging task. Here, we…
Power dissipation and energy consumption have become one of the most important problems in the design of processors today. This is especially true in power-constrained environments, such as embedded and mobile computing. While lowering the…
Computing-in-memory (CIM) has attracted significant attentions in recent years due to its massive parallelism and low power consumption. However, current CIM designs suffer from large area overhead of small CIM macros and bad programmablity…
This paper summarizes our work on experimental characterization and analysis of reduced-voltage operation in modern DRAM chips, which was published in SIGMETRICS 2017, and examines the work's significance and future potential. We take a…
Spin-orbit torques (SOTs) have opened a new path to switch the magnetization in perpendicularly magnetized films and are of great interest due to their potential applications in novel data storage technology, such as the magnetic random…
Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for…
We propose a novel Hamming distance tolerant content-addressable memory (HD-CAM) for energy-efficient in memory approximate matching applications. HD-CAM implements approximate search using matchline charge redistribution rather than its…
The human brain simultaneously optimizes synaptic weights and topology by growing, pruning, and strengthening synapses while performing all computation entirely in memory. In contrast, modern artificial-intelligence systems separate weight…
Increasing dampinglike spin-orbit torque (SOT) is both of fundamental importance for enabling new research into spintronics phenomena and also technologically urgent for advancing low-power spin-torque memory, logic, and oscillator devices.…