English

Ultra-fast perpendicular Spin Orbit Torque MRAM

Materials Science 2018-03-06 v2

Abstract

We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the ns range. Our results show that SOT-MRAM allows fast and low power write operations, which renders it promising for non-volatile cache memory applications.

Keywords

Cite

@article{arxiv.1509.02375,
  title  = {Ultra-fast perpendicular Spin Orbit Torque MRAM},
  author = {Murat Cubukcu and Olivier Boulle and Nikolaï Mikuszeit and Claire Hamelin and Thomas Brächer and Nathalie Lamard and Marie-Claire Cyrille and Liliana Buda-Prejbeanu and Kevin Garello and Ioan Mihai Miron and O. Klein and G. de Loubens and V. V. Naletov and Juergen Langer and Berthold Ocker and Pietro Gambardella and Gilles Gaudin},
  journal= {arXiv preprint arXiv:1509.02375},
  year   = {2018}
}

Comments

15 pages, 3 figures

R2 v1 2026-06-22T10:51:47.842Z