Related papers: NAND-like SOT-MRAM-based Approximate Storage for E…

Neuromorphic computing, which seeks to replicate the brain's ability to process information, has garnered significant attention due to its potential to achieve brain-like computing efficiency and human cognitive intelligence. Spin-orbit…

Memristive in-memory sorting has been proposed recently to improve hardware sorting efficiency. Using iterative in-memory min computations, data movements between memory and external processing units can be eliminated for improved latency…

Endpoint devices for Internet-of-Things not only need to work under extremely tight power envelope of a few milliwatts, but also need to be flexible in their computing capabilities, from a few kOPS to GOPS. Near-threshold(NT) operation can…

Recent years have witnessed growing interest in the use of Artificial Neural Networks (ANNs) for vision, classification, and inference problems. An artificial neuron sums N weighted inputs and passes the result through a non-linear transfer…

A compact, accurate, and bitwidth-programmable in-memory computing (IMC) static random-access memory (SRAM) macro, named CAP-RAM, is presented for energy-efficient convolutional neural network (CNN) inference. It leverages a novel…

The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…

The rapid development of Artificial Intelligence (AI) and Internet of Things (IoT) increases the requirement for edge computing with low power and relatively high processing speed devices. The Computing-In-Memory(CIM) schemes based on…

A device based on current-induced spin-orbit torque (SOT) that functions as an electronic neuron is proposed in this work. The SOT device implements an artificial neuron's thresholding (transfer) function. In the first step of a two-step…

Neuromorphic computing (NC) architecture has shown its suitability for energy-efficient computation. Amongst several systems, spin-orbit torque (SOT) based domain wall (DW) devices are one of the most energy-efficient contenders for NC. To…

In-memory computing is a promising approach to addressing the processor-memory data transfer bottleneck in computing systems. We propose Spin-Transfer Torque Compute-in-Memory (STT-CiM), a design for in-memory computing with Spin-Transfer…

The recently introduced energy-saving extension of the sub-optimal sliding mode control (SOSMC), which is known in the literature for the last two and half decades, incorporates a control-off mode that allows for saving energy during the…

State-of-the-art in-memory computation has recently emerged as the most promising solution to overcome design challenges related to data movement inside current computing systems. One of the approaches to performing in-memory computation is…

Non-volatile flip-flops (NVFFs) using power gating techniques promise to overcome the soaring leakage power consumption issue with the scaling of CMOS technology. Magnetic tunnel junction (MTJ) is a good candidate for constructing the NVFF…

Combining spin-orbit (SOT) and spin-transfer torques (STT) provides a practical approach for field-free switching in spin-orbit torque magnetic random-access memory (SOT-MRAM), a prerequisite for industrial deployment, but can compromise…

The rapid growth of deep neural network (DNN) workloads has significantly increased the demand for large-capacity on-chip SRAM in machine learning (ML) applications, with SRAM arrays now occupying a substantial fraction of the total die…

In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered ${\delta}-$TaN/Co20Fe60B20 devices through spin-torque…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) is known as the most promising replacement for SRAM technology in large Last-Level Caches (LLCs). Despite its high-density, non-volatility, near-zero leakage power, and immunity to radiation as…

The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the…

Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…

In this paper, we propose an energy efficient SW based approximate 4:2 compressor comprising a 3-input and a 5-input Majority gate. We validate our proposal by means of micromagnetic simulations, and assess and compare its performance with…