In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we experimentally demonstrate reliable memory bit selection and low-power-consumption recording in a two-by-two vortex-state dot array. The bit selection and core switching is made by flowing currents along two orthogonal addressing electrode lines chosen among the other crossed electrodes. Tailored pulse-type rotating magnetic fields are used for efficiently switching a vortex core only at the intersection of the two orthogonal electrodes. This robust mechanism provides reliable bit selection and information writing operations in a potential VRAM device.
@article{arxiv.1012.0895,
title = {Memory-bit selective recording in vortex-core cross-point architecture},
author = {Young-Sang Yu and Hyunsung Jung and Ki-Suk Lee and Peter Fischer and Sang-Koog Kim},
journal= {arXiv preprint arXiv:1012.0895},
year = {2011}
}