A damping-like spin orbit torque (SOT) is a prerequisite for ultralow power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition metal dichalcogenide (TMD) TaS2 interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25±0.03 and the spin Hall conductivity (2.63 × 1052eℏΩ−1 m−1) is found to be superior to values reported for other TMDs. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS2/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. The dominance of damping-like torque demonstrated in our study provides a promising path for designing next generation conducting TMD based low-powered quantum memory devices.
@article{arxiv.2004.02649,
title = {Damping-like Torque in Monolayer 1T-TaS$_2$},
author = {Sajid Husain and Xin Chen and Rahul Gupta and Nilamani Behera and Prabhat Kumar and Tomas Edvinsson and Felipe Garcia Sanchez and Rimantas Brucas and Sujeet Chaudhary and Biplab Sanyal and Peter Svedlindh and Ankit Kumar},
journal= {arXiv preprint arXiv:2004.02649},
year = {2021}
}