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We introduce a thermodynamically consistent, minimal stochastic model for complementary logic gates built with field-effect transistors. We characterize the performance of such gates with tools from information theory and study the…
In this work, we investigate the transport phenomena in compound semiconductor material based buried channel Quantum Well MOSFET with a view to developing a simple and effective model for the device current. Device simulation has been…
Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived…
Transient simulations of a resonant tunneling diode oscillator are presented. The semiconductor model for the diode consists of a set of time-dependent Schr\"odinger equations coupled to the Poisson equation for the electric potential. The…
Although a superconductor has no DC losses, a superconducting system does have significant losses, especially when it comes to power supply. Here, we study two different power supply systems. The first, a conventional one, consists of a…
On-chip thermometry at deep-cryogenic temperatures is vital in quantum computing applications to accurately quantify the effect of increased temperature on qubit performance. In this work, we present a sub-1 K temperature sensor in CMOS…
Silicon photonic switches are widely considered as a cost-effective solution for addressing the ever-growing data traffic in datacenter networks, as they offer unique advantages such as low power consumption, low latency, small footprint…
We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance…
Silicon carbide (SiC) represents a promising but largely untested plasma-facing material (PFM) for next-step fusion devices. In this work, an analytic mixed-material erosion model is developed by calculating the physical (via SDTrimSP) and…
A new Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET) is proposed and verified by two-dimensional simulation. Unlike in the case of conventional BMFET, which uses deep diffused p+-regions as the gate, the proposed device uses…
This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent in conventional voltage-driven devices. By replacing the…
In the last two decades we have assisted to a rush towards finding a He3-replacing technology capable of detecting neutrons emitted from fissile isotopes. The demand stems from applications like nuclear war-head screening or preventing…
This communication presents a comparative study on the charge transport (in transient and steady state) in bulk n-type doped SiC-polytypes: 3C-SiC, 4H-SiC and 6H-SiC. The time evolution of the basic macrovariables: the electron drift…
Non-reciprocal charge transport in supercurrent diodes (SDs) polarized growing interest in the last few years for its potential applications in superconducting electronics (SCE). So far, SD effects have been reported in complex hybrid…
Transient stability analysis (TSA) plays an important role in power system analysis to investigate the stability of power system. Traditionally, transient stability analysis methods have been developed using time domain simulation by means…
Superconducting transmon qubits based on hybrid superconductor-semiconductor Josephson junctions (gatemons) offer gate tunability, but their relaxation times remain well below those of state-of-the-art transmons, and the origin of this…
This paper proposes an electronic circuit simulator-based method to accelerate the power system transient simulation, where the modeling of a generic HVDC (High Voltage Direct Current) system is focused. The electronic circuit simulation…
Owing to the increasing interest in the commercialization of phase-change memory (PCM) devices, a number of TCAD models have been developed for their simulation. These models formulate the melting, amorphization and crystallization of…
We propose to operate a superconducting transition edge sensor (TES) using a different type of biasing, in which the resistance of the TES is kept constant by means of feedback on the bias voltage and is independent of the incoming signal…
Data-driven soft sensors have been widely applied in complex industrial processes. However, the interpretable spatio-temporal features extraction by soft sensors remains a challenge. In this light, this work introduces a novel method termed…