High Performance 4H-SiC Optically Controlled MOS Transistor
Abstract
This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent in conventional voltage-driven devices. By replacing the conventional gate electrode with a semi-transparent optical window, the device enables direct modulation of channel conductivity through ultraviolet illumination. Electrical and optical characterization demonstrates that under an optical power density above 0.1 W/cm^2, the device achieves an on/off current ratio exceeding 10^6 between illuminated and dark states. Notably, at an optical power density of 0.031 W/cm^2, the photogenerated current density exceeds that obtained under a gate bias of 15 V in magnitude. Energy band analysis confirms that the optical switching mechanism operates through direct photogenerated carrier generation and transport, fundamentally differing from conventional gate voltage control and thus circumventing interface-trap and EMI-related limitations. Dynamic measurements further reveal fast switching capability, with a rise time of 1.44 ns. These results validate the feasibility of optically driven switching in SiC-based devices and highlight their potential for high-speed logic applications.
Cite
@article{arxiv.2604.07673,
title = {High Performance 4H-SiC Optically Controlled MOS Transistor},
author = {Sitian Chen and Ziqian Tian and Guoliang Zhang and Jiafa Cai and Rongdun Hong and Xiaping Chen and Dingqu Lin and Shaoxiong Wu and Yuning Zhang and Feng Zhang},
journal= {arXiv preprint arXiv:2604.07673},
year = {2026}
}