A compact plasmonic MOS-based 2x2 electro-optic switch
Abstract
We report on a three-waveguide electro-optic switch for compact photonic integrated circuits and data routing applications. The device features a plasmonic metal-oxide-semiconductor (MOS) mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, Indium-Tin-Oxide, is altered via shifting the plasma frequency due to carrier accumulation inside the waveguide-based MOS structure. This light manipulation mechanism controls the transmission direction of transverse magnetic polarized light into either a CROSS or BAR waveguide port. The extinction ratio of 18 dB (7) dB for the CROSS (BAR) state, respectively, is achieved via a gating voltage bias. The ultrafast broadband fJ/bit device allows for seamless integration with Siliconon- Insulator platforms to for low-cost manufacturing.
Keywords
Cite
@article{arxiv.1506.02337,
title = {A compact plasmonic MOS-based 2x2 electro-optic switch},
author = {Chenran Ye and Ke Liu and Richard A. Soref and Volker J. Sorger},
journal= {arXiv preprint arXiv:1506.02337},
year = {2015}
}
Comments
10 pages,6 figures