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We briefly review a simple model of superconducting-normal phase-separation in transition-edge sensors in the SuperCDMS experiment. After discussing some design considerations relevant to the TES in the detectors, we study noise sources in…
A comprehensive study of drain current dispersion effects in $\beta$-Ga$_2$O$_3$ FETs has been done using DC, pulsed and RF measurements. Both virtual gate effect in the gate-drain access region and interface traps under the gate are most…
We review briefly the properties of a mixture of mutually interacting bosons (bound electron pairs) and itinerant fermions on a lattice (the boson-fermion model). The calculations of the superconducting phase transition temperature…
Studies of different experimental groups that explore the properties of a two-dimensional electron gas in silicon semiconductor systems ((100) Si metal-oxide-semiconductor field-effect transistors (MOSFETs) and (100) SiGe/Si/SiGe quantum…
Silicon-based fast time detectors have been widely used in high energy physics, nuclear physics, space exploration and other fields in recent years. However, silicon detectors often require complex low-temperature systems when operating in…
In this work we investigate energy efficient packet scheduling problem for the loss tolerant applications. We consider slow fading channel for a point to point connection with no channel state information at the transmitter side (CSIT). In…
Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to…
Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms including the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such…
Temperature rise of qubits due to heating is a critical issue in large-scale quantum computers based on quantum-dot (QD) arrays. This leads to shorter coherence times, induced readout errors, and increased charge noise. Here, we propose a…
The management of the energy consumption and thermal dissipation of multi-core heterogeneous platforms is becoming increasingly important as it can have direct impact on the platform performance. This paper discusses an approach that…
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform in quantum technology, especially because some TM defects emit in the telecom band. We develop a theory for the interaction of an active electron in the…
As the capacity of power systems grows, the need for quick and precise short-circuit fault location becomes increasingly vital for ensuring the safe and continuous supply of power. In this paper, we propose a fault location method that…
The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).
In the context of particle detectors, low-temperature covalent wafer-wafer bonding allows for integration of high-Z materials as absorbing layers with readout chips produced in standard CMOS processes. This enables for instance the…
The relentless pursuit of miniaturization and performance enhancement in electronic devices has led to a fundamental challenge in the field of circuit design and simulation: how to accurately account for the inherent stochastic nature of…
The paper presents accurate and simple dynamic model of a supercapacitor bank system for power system dynamics studies. The proposed model is derived from a detailed RC circuit representation. Furthermore, a complete control system of the…
Results of detailed simulations of the charge transfer inefficiency of a prototype serial readout CCD chip are reported. The effect of radiation damage on the chip operating in a particle detector at high frequency at a future accelerator…
In this paper the methodology and the results of a quasi real-time thermal characterization tool and method for the temperature mapping of circuits and boards based on sensing the infrared radiation will be introduced. With the proposed…
In this paper, the electrical behavior of tungsten carbide (WC) Schottky barrier on 4H-SiC was investigated. First, a statistical current-voltage (I-V) analysis in forward bias, performed on a set of equivalent diodes, showed a symmetric…
In this paper, we propose an energy-based method for the transient stability analysis of a power system transmission switching event. In this method the exit point of pseudo-fault trajectory is used to determine a relevant controlling…