Temperature rise of qubits due to heating is a critical issue in large-scale quantum computers based on quantum-dot (QD) arrays. This leads to shorter coherence times, induced readout errors, and increased charge noise. Here, we propose a simple thermal circuit model to describe the heating effect on silicon QD array structures. Noting that the QD array is a periodic structure, we represent it as a thermal distributed-element circuit, forming a thermal transmission line. We validate this model by measuring the electron temperature in a QD array device using Coulomb blockade thermometry, finding that the model effectively reproduces experimental results. This simple and scalable model can be used to develop the thermal design of large-scale silicon-based quantum computers.
@article{arxiv.2412.14565,
title = {Thermal circuit model for silicon quantum-dot array structures},
author = {Takeru Utsugi and Nobuhiro Kusuno and Takuma Kuno and Noriyuki Lee and Itaru Yanagi and Toshiyuki Mine and Shinichi Saito and Digh Hisamoto and Ryuta Tsuchiya and Hiroyuki Mizuno},
journal= {arXiv preprint arXiv:2412.14565},
year = {2025}
}