Transition metal (TM) defects in silicon carbide (SiC) are a promising platform in quantum technology, especially because some TM defects emit in the telecom band. We develop a theory for the interaction of an active electron in the D-shell of a TM defect in SiC with the TM nuclear spin and derive the effective hyperfine tensor within the Kramers doublets formed by the spin-orbit coupling. Based on our theory we discuss the possibility to exchange the nuclear and electron states with potential applications for nuclear spin manipulation and long-lived nunclear-spin based quantum memories.
@article{arxiv.2104.12351,
title = {Hyperfine Structure of Transition Metal Defects in SiC},
author = {Benedikt Tissot and Guido Burkard},
journal= {arXiv preprint arXiv:2104.12351},
year = {2021}
}