Related papers: Accurate Time-segmented Loss Model for SiC MOSFETs…
A novel bipolar transistor structure, namely, a SiC emitter lateral NPM Schottky collector bipolar transistor (SCBT) with a silicon-on-insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. A comprehensive comparison…
When designing and studying circuits operating at cryogenic temperatures understanding local heating within the circuits is critical due to the temperature dependence of transistor and noise behavior. We have investigated local heating…
The simulation of the development of cascade processes in calorimeters of different types for the implementation of energy measurement by correlation curves method, is carried out. Heterogeneous calorimeter has a significant transient…
The microstructure of SiNx is strongly affected by its stoichiometry, x. The stoichiometry of SiNx thin films can be modified by adjusting the gas flow rates during LPCVD deposition. The deficiency or excess of Si atoms enhance the…
Renewable energy source such as photovoltaic (PV) cell generates power from the sun light by converting solar power to electrical power with no moving parts and less maintenance. A single photovoltaic cell produces voltage of low level. In…
Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived…
In this work, we describe the charge transport in two-dimensional (2D) Schottky barrier field-effect transistors (SB-FETs) based on the carrier injection at the Schottky contacts. We first develop a numerical model for thermionic and…
This paper investigates the applicability of time and time-frequency features based classifiers to distinguish internal faults and other transients - magnetizing inrush, sympathetic inrush, external faults with current transformer…
Optical phase-change materials are highly promising for emerging applications such as tunable metasurfaces, reconfigurable photonic circuits, and non-von Neumann computing. However, these materials typically require both high melting…
Kink effect is a large obstacle for the cryogenic model of inversion-type bulk silicon MOSFET devices. This letter used two methods to correct the kink effect: the modified evolutionary strategy (MES) and dual-model modeling (BSIM3v3 and…
Efficient thermal management is critical for cryogenic CMOS circuits, where local heating can compromise device performance and qubit coherence. Understanding heat flow at the nanoscale in these multilayer architectures requires localized,…
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g. vanadium (V), allow for optical emission in one of the telecom bands. For other defects it…
Optimization of power loss in soft magnetic components basis on the choice of the best technological parameters values. Therefore, the power losses have been measured in Somaloy 500 samples for a wide range of frequency and magnetic…
The growing penetration of inverter-based resources and associated controls necessitates system-wide electromagnetic transient (EMT) analyses. EMT tools and methods today were not designed for the scale of these analyses. In light of the…
In this work, the implications of high field bias conditions in radiation-induced defect recovery in 3C-SiC crystals is studied. It is well known that transient heating effects (or thermal spikes) occur when energetic swift heavy ions…
Silicon carbide (SiC) is a wide bandgap (WBG) semiconductor with promising applications in high-power and high-frequency electronics. Among its many useful properties, the high thermal conductivity is crucial. In this letter, the…
Complex integrated circuits require multiple wiring layers. In complementary metal-oxide-semiconductor (CMOS) processing, these layers are robustly separated by amorphous dielectrics. These dielectrics would dominate energy loss in…
Self-heating (SHE) TCAD numerical simulations have been performed, for the first time, on 30nm FDSOI MOS transistors at extremely low temperatures. The self-heating temperature rise dTmax and the thermal resistance Rth are computed as…
The aim of this work is to further expand the capability of the coarse-grid Computational Fluid Dynamics (CFD) approach, SubChCFD, to effectively simulate transient and buoyancy-influenced flows, which are critical in accident analyses of…
As transistor sizes reach the mesoscopic scale, the limitations of traditional methods in ensuring thermodynamic consistency have made power dissipation optimization in transistor amplifiers a critical challenge. Based on stochastic…