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Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge…
The electrostatic gating effects on molecular transistors are investigated using the density functional theory (DFT) combined with the nonequilibrium Green's function (NEGF) method. When molecular energy levels are away from the Fermi…
Tunable plasmonic resonances across the visible and near infrared spectra have provided novel ways to develop next-generation nanophotonic devices. In this study, by using optothermally controllable phase-changing material (PCM), we…
Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work…
In this paper, we demonstrate by simulation the feasibility of electrostatically doped and therefore reconfigurable planar field-effect-transistor (FET) structure which is based on our already fabricated and published Si-nanowire (SiNW)…
Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2D TFETs: electrical…
Field-effect transistors based on band-to-band tunneling (BTBT) have gained a lot of recent interest due to their potential for reducing power dissipation in integrated circuits. In this paper we present a detailed performance comparison…
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG)…
A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the…
Semiconducting two-dimensional transition metal chalcogenide crystals have been regarded as the promising candidate for the future generation of transistor in modern electronics. However, how to fabricate those crystals into practical…
Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…
A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+…
We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…
A heterojunction tunneling field effect transistor based on armchair graphene nanoribbons is proposed and studied using ballistic quantum transport simulation based on 3D real space nonequilibrium Green's function formalism. By using low…
In recent years, a lot of scientific research effort has been put forth for the investigation of Transition Metal Dichalcogenides (TMDC) and other Two Dimensional (2D) materials like Graphene, Boron Nitride. Theoretical investigation on the…
Graphene based transistors relying on a conventional structure cannot switch properly because of the absence of an energy gap in graphene. To overcome this limitation, a barristor device was proposed, whose operation is based on the…
A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap…
Recently, short channel effects (SCE) and power consumption dissipation problems pose big challenges which need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters…
We propose a new method for accurately calculating electrical transport properties of a lightly-doped thermoelectric material from density functional theory (DFT) calculations, based on experimental data and density functional theory…
The recent fabrication of graphene nanoribbon (GNR) field-effect transistors poses a challenge for first-principles modeling of carbon nanoelectronics due to many thousand atoms present in the device. The state of the art quantum transport…