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State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However,…
Calculating charge transfer (CT) excitation energies with high accuracy and low computational cost is a challenging task. Kohn-Sham density functional theory (KS-DFT), due to its efficiency and accuracy, has achieved great success in…
We report high performance p-type field-effect transistors based on single layered (thickness, ~0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and high-{\kappa} gate dielectrics. The top-gated monolayer…
The inclusive pion double charge exchange (DCX) on oxygen nuclei has been measured in the region where additional pion production is kinematically forbidden. The experiment was performed at ITEP PS at incident pi- kinetic energies T_0=…
High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the…
Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…
Transition metal doping is commonly used for altering the properties of solid-state materials to suit applications in science and technology. Partially filled $d$-shells of transition metal atoms lead to electronic states with diverse…
Density functional theory (DFT) embedding provides a formally exact framework for interfacing correlated wave-function theory (WFT) methods with lower-level descriptions of electronic structure. Here, we report techniques to improve the…
Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain junction and thus can be easier to implement in aggressive…
We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets suspended in water assembled via dielectrophoresis. The two terminal resistances of the devices were improved by an…
Topological insulators (TIs) have been considered as promising candidates for next generation of electronic devices due to their topologically protected quantum transport phenomena. In this work, a scheme for atomic-scale field effect…
We presents a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) based on the virtual-source (VS) approach, describing the intrinsic current-voltage and charge-voltage characteristics. The features of…
Here, we study the possibility of selective high-harmonic generation (HHG) based on the concept of charge transfer plasmons (CTP) in bridged nanoparticle assemblies. By choosing plasmonic dimer nanoantenna, as a fundamental member of…
New two diemensional structures nanoribbon including phosphorus and germanium atoms are introduced for the nanoelectronic applications. Under various bias voltages, the electronic transport in the systems have been studied within the…
The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to…
We report experimental and theoretical evidence that GaGeTe is a basic $Z_2$ topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is…
Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…
A new approach to suppress ion backflow in multi-GEM structures is suggested. In this approach, the potential difference applied across the gap between two adjacent GEMs is reversed compared to the standard configuration. In such a gap…
Gate-tunable transmons (gatemons) employing semiconductor Josephson junctions have recently emerged as building blocks for hybrid quantum circuits. In this study, we present a gatemon fabricated in planar Germanium. We induce…
Electrostatically tunable Josephson field-effect transistors (JoFETs) are one of the most desired building blocks of quantum electronics. JoFET applications range from parametric amplifiers and superconducting qubits to a variety of…