Related papers: A Guideline for Silicon Carbide MOSFET Thermal Cha…
We present a new technique for measuring the critical temperature Tc in the high pressure, high Tc electron-phonon-driven superconducting hydrides. This technique does not require connecting leads to the sample. In the multiphonon region of…
We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field…
The theory of current transport in a narrow superconducting channel accounting for thermal fluctuations is revisited. The value of voltage appearing in the sample is found as the function of temperature (close to transition temperature…
The shape of experimentally observed R(T) transition of thin superconducting wires is analyzed. Broadening of the transition in quasi-1-dimensional superconducting channels is typically associated with phase slip mechanism provided by…
We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol initializes a previously unmeasured device after cooldown,…
A silicon-tungsten (Si-W) sampling calorimeter, consisting of 19 alternate layers of silicon pad detectors (individual pad area of 1~cm$^2$) and tungsten absorbers (each of one radiation length), has been constructed for measurement of…
This study presents a comprehensive methodology for determining the thermal conductivity (TC) of materials with high reliability. The methodology addresses issues such as surface topographical variations and substrate interference by…
This paper discusses how classical transport theories such as the thermionic emission, can be used as a powerful tool for the study and the understanding of the most complex mechanisms of transport in Fin Field Effect Transistors (FinFETs).…
We developed a simple, flexible, low-cost, and computer-controlled cryogenic temperature measurement system for undergraduate instructional laboratories. An Arduino microcontroller board measures the voltage across a silicon diode to…
A negative kink in excess conductivity is observed in p-type non-degenerate (moderate dopant concentration) silicon wafers when excited by a very narrow pulse of 532 nm laser appearing just after the complete positive decay of dark…
In this paper we describe a spatial decomposition of the thermal conductivity, what we name "site-projected thermal conductivity", a gauge of the thermal conduction activity at each site. The method is based on the Green-Kubo formula and…
By taking advantage of a stability criterion established recently, the critical temperature $T_c$ is reckoned with help of the microscopic parameters, characterising the normal and superconducting electrons, namely the independent-electron…
What factors fundamentally determine the value of superconducting transition temperature (Tc) in high temperature superconductors has been the subject of intense debate. Following the establishment of an empirical law known as Homes'law,…
Temperature sensors with micro- and nanoscale spatial resolution have long been explored for their potential to investigate the details of physical systems at an unprecedented scale. In particular, the rapid miniaturization of transistor…
We estimate a statistical model to predict the superconducting critical temperature based on the features extracted from the superconductor's chemical formula. The statistical model gives reasonable out-of-sample predictions: $\pm 9.5$ K…
A modified AC method based on micro-fabricated heater and resistive thermometers has been applied to measure the thermopower of microscale samples. A sinusoidal current with frequency {\omega} is passed to the heater to generate an…
We measure the thermal time constants of suspended single layer molybdenum disulfide drums by their thermomechanical response to a high-frequency modulated laser. From this measurement the thermal diffusivity of single layer MoS$_2$ is…
This work introduces a thermoreflectance-based system designed to measure the surface temperature field of activated microelectronic devices at submicron spatial resolution with either a laser or a CCD camera. The article describes the…
The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and…
As technology scales down, the static power is expected to become a significant fraction of the total power. The exponential dependence of static power with the operating temperature makes the thermal profile estimation of high-performance…