Related papers: A Guideline for Silicon Carbide MOSFET Thermal Cha…
In this paper the methodology and the results of a quasi real-time thermal characterization tool and method for the temperature mapping of circuits and boards based on sensing the infrared radiation will be introduced. With the proposed…
Heat management is crucial in the design of nanoscale devices as the operating temperature determines their efficiency and lifetime. Past experimental and theoretical works exploring nanoscale heat transport in semiconductors addressed…
Thermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist,…
High-purity cubic silicon carbide possesses the second-highest thermal conductivity among large-scale crystals, surpassed only by diamond, making it crucial for practical applications of thermal management. Recent theoretical studies…
We have combined the Boltzmann transport equation with an {\it ab initio} approach to compute the thermoelectric coefficients of semiconductors. Electron-phonon, ionized impurity, and electron-plasmon scattering rates have been taken into…
Measuring thermal properties of materials is not only of fundamental importance in understanding the transport processes of energy carriers (electrons and phonons) but also of practical interest in developing novel materials with desired…
A strain sensor inspired by a Widlar self-biased current source topology called $\beta$-multiplier is developed to obtain a strain-dependent reference current with high supply rejection. The sensor relies on the piezoresistive effect in the…
Owing to their unique tunable optical properties, chalcogenide phase change materials are increasingly being investigated for optics and photonics applications. However, in situ characterization of their phase transition characteristics is…
Semiconductor devices favor high carrier mobility for reduced Joule heating and high thermal conductivity for rapid heat dissipation. The ability to accurately characterize the motion of charge carriers and heat carriers is necessary to…
An in-house Seebeck coefficient measurement system has been developed which can measure the thermoemf (Seebeck coefficient) of the sample, under large temperature difference, in the temperature range 300-600 K. Unlike majority of reported…
On-chip thermometry at deep-cryogenic temperatures is vital in quantum computing applications to accurately quantify the effect of increased temperature on qubit performance. In this work, we present a sub-1 K temperature sensor in CMOS…
This paper describes a new and simple approach to accurately characterize the transient self-heating effect in Si-Ge Heterojunction Bipolar Transistors (HBTs), based on pulse measurements and verified through transient electro-thermal…
We report on an optimized micro-machined thermal flow-rate sensor as part of an autonomous multi-parameter sensing device for water network monitoring. The sensor has been optimized under the following constraints: low power consumption and…
We have performed thermal conductance measurements on individual single crystalline silicon suspended nanowires. The nanowires (130 nm thick and 200 nm wide) are fabricated by e-beam lithography and suspended between two separated pads on…
Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer…
In this work we study, theoretically, electronic mobility of the silicon carbide semiconductor in the 3C phase, named 3C-SiC. 3C-SiC has shown great potential for applications in extreme conditions. Thus, the study of the electronic…
We report the on-wafer characterization of $S$-parameters and microwave noise temperature ($T_{50}$) of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 40 K and 300 K and over a range of drain-source voltages…
The superconducting properties of a layered system are analyzed for the cases of zero- and non-zero angular momentum of the pairs. The effective thermodynamic potential for the quasi-2D XY-model for the gradients of the phase of the order…
We present a method for in situ temperature measurement of superconducting quantum circuits, by using the first three levels of a transmon device to which we apply a sequence of $\pi$ gates. Our approach employs projective dispersive…
Imbalanced voltage sharing during the turn-off transient is a challenge for series-connected silicon carbide (SiC) MOSFET application. This article first discusses the influence of the gate-drain discharge deviation on the voltage imbalance…