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A simple electronic experiment with a field effect transistor type microstructure is suggested. The thin superconductor layer is the source-drain channel of the layered structure where an AC current is applied. It is necessary to measure…
This work presents a physics based compact model for SiC power MOSFETs that accurately describes the I-V characteristics up to large voltages and currents. Charge-based formulations accounting for the different physics of SiC power MOSFETs…
Studying thermal transport at the nanoscale poses formidable experimental challenges due both to the physics of the measurement process and to the issues of accuracy and reproducibility. The laser-induced transient thermal grating (TTG)…
A microwave kinetic inductance detector (MKID) is a cutting-edge superconducting detector, and its principle is based on a superconducting resonator circuit. The superconducting transition temperature (Tc) of the MKID is an important…
We present suspended heater structures fabricated in a standard C- and O-band silicon (Si) photonics platform that can achieve sufficiently high local temperatures to induce effective refractive index trimming of Si and silicon nitride…
A calculation method for engine temperatures is presented. Special focus is placed on the transient and scattering boundary conditions within the combustion chamber, including fired and coasting conditions, as well as the dynamic heat…
The intermittency of solar and wind power can be addressed by integrating them with Solid Oxide Cells (SOCs). This study delves into the transient characteristics of SOCs and their dependence on dynamic heat and mass transfer processes.…
A network identification by deconvolution (NID) method is applied to the thermal transient response of packaged and unpackaged microcoolers. A thin film resistor on top of the device is used as the heat source and the temperature sensor.…
A setup is designed for measuring the Seebeck coefficient (S) of materials in form of thin film, bar and wire. The main feature of this setup is control in heating and cooling cycles. In this setup heat pulse is used to generate the…
Silicon carbide is a wide-bandgap semiconductor with an emerging CMOS technology platform and it is widely deployed in high power and harsh environment electronics. This material is also attracting interest for quantum technologies through…
Silicon carbide (SiC) has become a popular material for next-generation power components due to its smaller size, faster switching speed, simpler cooling and greater reliability than Si-MOSFETs. With this in mind, we are thinking about…
A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are…
For a broad range of electron densities $n$ and temperatures $T$, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto a universal curve with a single parameter…
A suspended system for measuring the thermal properties of membranes is presented. The sensitive thermal measurement is based on the 3$\omega$ dynamic method coupled to a V$\ddot{o}$lklein geometry. The device obtained using micro-machining…
The reduction of the thermal conductivity in nanostructures opens up the possibility of exploiting for thermoelectric purposes also materials such as silicon, which are cheap, available and sustainable but with a high thermal conductivity…
We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances. At high…
At the ultra-thin limit below 20 nm, a film's electrical conductivity, thermal conductivity, or thermoelectricity depends heavily on its thickness. In most studies, each sample is fabricated one at a time, potentially leading to…
Anisotropic nanomaterials possess interesting thermal transport properties because they allow orientation of heat fluxes along preferential directions due to a high ratio (up to three orders of magnitude) between their in-plane and…
The development of large-scale quantum systems increasingly relies on the close integration of heterogeneous components such as qubits, control electronics, and readout circuits, making thermal management at cryogenic temperatures a central…
Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective doping concentration. However, for highly irradiated sensors, the…