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We have measured the thermal properties of suspended membranes from 10 K to 300 K for two amplitudes of internal stress (about 0.1 GPa and 1 GPa) and for two different thicknesses (50 nm and 100 nm). The use of the original 3 \omega…
The main purpose of this work was to design, develop and construct a simple, low-cost AC susceptometer to measure large, bulk superconducting samples (up to 32 mm in diameter) in the temperature range 78-120 K. The design incorporates a…
We report on the first measurement of the Seebeck coefficient in a tunnel-contacted and gate-tunable individual single-quantum dot junction in the Kondo regime, fabricated using the electromigration technique. This fundamental…
With the successful construction and operation of a highly granular hadron calorimeter system, featuring approx. 22000 individually read out SiPM-on-tile channels, the CALICE collaboration has set the next milestone in proving the…
While using first-principles-based Boltzmann transport equation approach to predict the thermal conductivity of crystalline semiconductor materials has been a routine, the validity of the approach is seldom tested for high-temperature…
The thermal sensitive electrical parameter (TSEP) method is crucial for enhancing the reliability of power devices through junction temperature monitoring. The TSEP method comprises three key processes: calibration, regression, and…
A new approach to the study of similarity of temperature profiles is presented. It is applicable for any 2-D fluid flow along an isothermal heated (cooled) wall. The approach is based on a simple concept; the area under a set of scaled…
The discoveries of superconductivity in the heavily-boron doped semiconductors diamond (C:B) in 2004 and silicon (Si:B) in 2006 have renewed the interest in the physics of the superconducting state of doped semiconductors. Recently, we…
This paper demonstrates the use of voltage noise thermometry, with a cross-correlation technique, as a dissipation-free method of thermometry inside a CMOS integrated circuit (IC). We show that this technique exhibits broad agreement with…
The Anderson localization transition is considered at finite temperatures. This includes the electrical conductivity as well as the electronic thermal conductivity and the thermoelectric coefficients. An interesting critical behavior of the…
Resistive, magnetization, torque, specific heat and scanning tunneling microscopy measurements are carried out on the hole heavily doped CsFe$_2$As$_2$ single crystals. A characteristic temperature $T^*\sim13$ K, which is several times…
The next generation of ultra-low-noise cryogenic detectors for space science applications require continued exploration of materials characteristics at low temperatures. The low noise and good energy sensitivity of current Transition Edge…
A method to measure thermophysical characteristics (TPC) of conductive materials is described. The method is based upon controlled bulk (e.g., Ohmic) heating and measurement of the averaged over the volume of a sample temperature and the…
Semiconductors are widely used in various applications and critical infrastructures. These devices have specified lifetimes and quality targets that manufacturers must achieve. Lifetime estimation is conducted through accelerated stress…
The application of low-dimensional materials for heat dissipation requires a comprehensive understanding of the thermal transport at the cross interface, which widely exists in various composite materials and electronic devices. In this…
Understanding the microscopic thermal effects of the hydrogel is important for its application in diverse fields, including thermal-related studies in tissue engineering and thermal management for flexible electronic devices. In recent…
We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain…
With the rapid advance of high-performance computing and electronic technologies, understanding thermal conductivity in materials has become increasingly important. This study presents a novel method: the Site-projected Thermal Conductivity…
In a high mobility two-dimensional electron system in Si, near the critical density, $n_c=0.32\times10^{11}$cm$^{-2}$, of the apparent metal-to-insulator transition, the conductivity displays a linear temperature ($T$) dependence around the…
The quest for high-efficiency heat-to-electricity conversion has been one of the major driving forces towards renewable energy production for the future. Efficient thermoelectric devices require high voltage generation from a temperature…