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Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological…
Anisotropic thermal transport plays a key role in both theoretical study and engineering practice of heat transfer, but accurately measuring anisotropic thermal conductivity remains a significant challenge. To address this issue, we propose…
Various chips for the silicon sensors measurements are described. These chips are based on 0.35 um and 0.18um CMOS technology. Several analog chips together with self-trigger /derandomizer one allow to measure silicon sensors designed for…
Recently, we showed that the self-field transport critical current, Ic(sf), of a superconducting wire can be defined in a more fundamental way than the conventional (and arbitrary) electric field criterion, Ec = 1 microV/cm. We defined…
Schemes aimed at transferring individual electrons in semiconductor devices and detecting possible transfer errors have increasing importance for metrological applications. We study the coupling of a superconducting Josephson-junction-based…
Large power consumption of silicon CMOS electronics is a challenge in very-large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at…
The value of the scaling parameter $E_{\text{eff}}$ of the temperature dependence for current generated in silicon bulk is investigated for highly irradiated devices. Measurements of devices irradiated to fluences above $1 \times 10^{15}…
Our paper presents a non-destructive thermal transient measurement method that is able to reveal differences even in the micron size range of MEMS structures. Devices of the same design can have differences in their sacrificial layers as…
Reasonably good agreement with the superconducting transition temperatures of the cuprate high-Tc superconductors can be obtained on the basis of an approximate phenomenological theory. In this theory, two criteria are used to calculate the…
This paper addresses the question of whether a ``rigid molecule'' (one which does not deform in an external field) used as the conducting channel in a standard three-terminal MOSFET configuration can offer any performance advantage relative…
Predicting the transition temperature, Tc, of a superconductor from Periodic Table normal state properties is regarded as one of the grand challenges of superconductivity. By studying the correlations of Periodic Table properties with known…
Differential scanning calorimetry (DSC) is one of the most versatile probes for silicate glasses, allowing determination of, e.g., transition temperatures (glass, crystallization, melting) and the temperature dependence of heat capacity.…
Silicon Carbide is renowned for its exceptional thermal stability, making it a crucial material for high-temperature power devices in extreme environments. While optically detected magnetic resonance in SiC has been widely studied for…
Temperature imaging of nanoscale systems is a fundamental problem which has myriad potential technological applications. For example, nanoscopic cold spots can be used for spot cooling electronic components while hot spots could be used for…
Phononic silicon structures have emerged as an integrable and scalable nanosystem for tailoring thermal transport. However, their widespread adoption has been limited by their complex fabrication pathways. Alongside, the reliable…
When designing and studying circuits operating at cryogenic temperatures understanding local heating within the circuits is critical due to the temperature dependence of transistor and noise behavior. We have investigated local heating…
We present a high-resolution microwave spectrometer to measure the frequency-dependent complex conductivity of a superconducting thin film near the critical temperature. The instrument is based on a broadband measurement of the complex…
In this letter, we present the direct loss tangent measurement of a high-resistivity intrinsic (100) silicon wafer in the temperature range from ~ 70 mK to 1 K, approaching the quantum regime. The measurement was performed using a technique…
Superconducting thin-films are central to the operation of many kinds of quantum sensors and quantum computing devices: Kinetic Inductance Detectors (KIDs), Travelling-Wave Parametric Amplifiers (TWPAs), Qubits, and Spin-based Quantum…
The quantum transduction of an rf/microwave signal to the optical domain, and vice versa, paves the way for technologies that exploit the advantages of each domain to perform quantum operations. Since electro-optomechanical devices…