Related papers: HZO-based FerroNEMS MAC for In-Memory Computing

The proliferation of Transformer models is often constrained by the significant computational and memory bandwidth demands of deployment. To address this, we present MXFormer, a novel, hybrid, weight-stationary Compute-in-Memory (CIM)…

Fully Homomorphic Encryption (FHE) imposes substantial memory bandwidth demands, presenting significant challenges for efficient hardware acceleration. Near-memory Processing (NMP) has emerged as a promising architectural solution to…

Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications due to their exceptional polarization properties and compatibility with conventional semiconductor processing techniques.…

Ferroelectric field effect transistors (FeFETs) are being actively investigated with the potential for in-memory computing (IMC) over other non-volatile memories (NVMs). Content Addressable Memories (CAMs) are a form of IMC that performs…

Newly emerged materials from the family of Heuslers and complex oxides exhibit finite bandgaps and ferromagnetic behavior with Curie temperatures much higher than even room temperature. In this work, using the semiclassical…

Ferroelectric tunnel junction devices based on ferroelectric thin films of solid solutions of hafnium dioxide can enable CMOS integration of ultra-low power ferroelectric devices with potential for memory and emerging computing schemes such…

The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing require innovations at device level to enable novel…

Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer…

Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers --…

We propose 2D Piezoelectric FET (PeFET) based compute-enabled non-volatile memory for ternary deep neural networks (DNNs). PeFETs consist of a material with ferroelectric and piezoelectric properties coupled with Transition Metal…

The thesis investigates the utilization of memristive and memcapacitive crossbar arrays in low-power machine learning accelerators, offering a comprehensive co-design framework for deep neural networks (DNN). The model, implemented through…

Biologically-inspired computing models have made significant progress in recent years, but the conventional von Neumann architecture is inefficient for the large-scale matrix operations and massive parallelism required by these models. This…

I present a review of both experimental and theoretical studies performed during the recent three years, which deal with the physical properties and possible applications of graphene placed on ferroelectric (organic or Pb(ZrxTi1-x)O3 (PZT)…

We study the structural and electronic properties of various hafnium sub-oxides HfzO from z = 9 to z = 0.5, by ab initio simulation using Density Functional Theory. The stability of these sub-oxides is studied against monoclinic HfO2. The…

The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a…

Neuromorphic computing, inspired by biological intelligence, offers a pathway to revolutionize artificial intelligence (AI) by unifying memory and processing in an energy-efficient, sustainable framework for data-intensive tasks.…

This novel piezoelectric zinc oxide (ZnO) thin film microcantilever was fabricated by micromachining technique. To release the cantilever, wet anisotropic etching of Silicon (Si) was performed by tetramethyl ammonium hydroxide (TMAH). The…

3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instability caused by grain boundaries. Here, we overcome these…

Understanding hydrogen diffusion is critical for improving the reliability and performance of oxide thin-film transistors (TFTs), where hydrogen plays a key role in carrier modulation and bias instability. In this work, we investigate…

We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures.…