Related papers: HZO-based FerroNEMS MAC for In-Memory Computing
In this work, we propose a ferroelectric FET(FeFET) time-domain compute-in-memory (TD-CiM) array as a homogeneous processing fabric for binary multiplication-accumulation (MAC) and content addressable memory (CAM). We demonstrate that: i)…
Ferroelectric Hf0.5Zr0.5O2 (HZO) thin films are promising for next-generation memory and logic devices due to their CMOS compatibility and scalability. The spatial uniformity of the orthorhombic (O) phase is crucial for optimizing…
Combinatorial optimization problems (COPs) are crucial in many applications but are computationally demanding. Traditional Ising annealers address COPs by directly converting them into Ising models (known as direct-E transformation) and…
The ferroelectric polarization switching in ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) in the HZO/Al2O3 ferroelectric/dielectric stack is investigated systematically by capacitance-voltage and polarization-voltage…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties…
The discovery of ferroelectric properties of binary oxides revitalized the interest in ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor technology and ferroelectric memories. However, before hitting the…
The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to…
Time-domain nonvolatile in-memory computing (TD-nvIMC) offers a promising pathway to reduce data movement and improve energy efficiency by encoding computation in delay rather than voltage or current. This work presents a fully integrated…
Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap…
InGaZnO (IGZO) channel FeFETs have attracted notable interest thanks to their advances in endurance. This work evaluates the viability of NOR-type IGZO FeFETs for readcentric AI inference workloads via design-technology cooptimization…
Optimization of materials performance for specific applications often requires balancing multiple aspects of materials functionality. Even for the cases where generative physical model of material behavior is known and reliable, this often…
This study presents a theoretical investigation of the physical mechanisms governing small signal capacitance in ferroelectrics, focusing on Hafnium Zirconium Oxide. Utilizing a time-dependent Ginzburg Landau formalism-based 2D multi-grain…
Binary oxide ferroelectrics like doped HfO2, compatible with complementary metal-oxide-semiconductor (CMOS) platforms, have gained significant interest for energy efficient, scalable, high-performance non-volatile memory and neuromorphic…
Ferroelectric materials promise exceptional attributes including low power dissipation, fast operational speeds, enhanced endurance, and superior retention to revolutionize information technology. However, the practical application of…
The ultimate goal of multiferroic research is the development of new-generation non-volatile memory devices, the so-called magnetoelectric (ME) memories, where magnetic bits are controlled via electric fields without the application of…
Compute-in-memory (CIM) accelerators for spiking neural networks (SNNs) are promising solutions to enable $\mu$s-level inference latency and ultra-low energy in edge vision applications. Yet, their current lack of flexibility at both the…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing such as oxygen vacancy formation and interfacial reactions appear to strongly affect device performance. However, the nanoscale structure,…
Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applications. Despite tremendous efforts to explore the formation…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for…