Related papers: HZO-based FerroNEMS MAC for In-Memory Computing

This paper investigates the deflection of micro- electro-mechanical system (MEMS) based sandwiched cantilever beam for piezoelectric actuation using eight of the popular lead zirconatetitanate (PZT)piezoceramic material. The simulation for…

Metal-nanoclusters (NC), deposited by magnetron-based nanocluster source coupled with quadrupole mass filter (QMF) assembly having independent control over its size and density, are used in fabricating NC-based non-volatile memory (NVM)…

The non-destructive capacitance read-out of ferroelectric capacitors (FeCaps) based on doped HfO$_2$ metal-ferroelectric-metal (MFM) structures offers the potential for low-power and highly scalable crossbar arrays. This is due to a number…

Hafnium dioxide (HfO2) is a promising ferroelectric (FE) material for achieving high-density nonvolatile memory and neuromorphic computing, due to its compatibility with the mainstream integrated circuit technology and the surprisingly…

Computationally hard combinatorial optimization problems (COPs) are ubiquitous in many applications, including logistical planning, resource allocation, chip design, drug explorations, and more. Due to their critical significance and the…

Compute-in-memory (CiM) is a promising solution for addressing the challenges of artificial intelligence (AI) and the Internet of Things (IoT) hardware such as 'memory wall' issue. Specifically, CiM employing nonvolatile memory (NVM)…

We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 {\mu}W) and energy (<200 fJ/bit/{\mu}m2), low read-power (~nW), and high endurance (>millions of cycles). To understand their…

Understanding various aspects of ferroelectricity in hafnia-based nanomaterials is of vital importance for the development of future non-volatile memory and logic devices. Here, the unconventional and weak electromechanical response of…

Ferroelectricity in the complementary metal-oxide semiconductor (CMOS)-compatible hafnia (HfO$_2$) is crucial for the fabrication of high-integration nonvolatile memory devices. However, the capture of ferroelectricity in HfO$_2$ requires…

This paper reports a comprehensive study on the impacts of temperature-change, process variation, flicker noise and device aging on the inference accuracy of pre-trained all-ferroelectric (FE) FinFET deep neural networks.…

We propose non-volatile memory (NVM) designs based on Piezoelectric Strain FET (PeFET) utilizing a piezoelectric/ferroelectric (PE/FE such as PZT) coupled with 2D Transition Metal Dichalcogenide (2D-TMD such as MoS2) transistor. The…

Ferroelectric memristive devices based on hafnia are promising systems for neuromorphic electronics, yet the interplay between polarization-modulated resistive changes and defect-mediated transport often leads to complex and debated…

This work presents a novel approach to configure 2T-nC ferroelectric RAM (FeRAM) for performing single cell logic-in-memory operations, highlighting its advantages in energy-efficient computation over conventional DRAM-based approaches.…

Neuro-inspired computing architectures are one of the leading candidates to solve complex, large-scale associative learning problems. The two key building blocks for neuromorphic computing are the synapse and the neuron, which form the…

Ferroelectric hafnium zirconium oxide (HZO) thin films show significant promise for applications in ferroelectric random-access memory, ferroelectric field-effect transistors, and ferroelectric tunneling junctions. However, there are…

Rapid advancements in artificial intelligence have given rise to transformative models, profoundly impacting our lives. These models demand massive volumes of data to operate effectively, exacerbating the data-transfer bottleneck inherent…

Neuro-symbolic artificial intelligence (AI) excels at learning from noisy and generalized patterns, conducting logical inferences, and providing interpretable reasoning. Comprising a 'neuro' component for feature extraction and a 'symbolic'…

Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with…

Information and communication technologies account for a growing portion of global environmental impacts. While emerging technologies, such as emerging non-volatile memories (eNVM), offer a promising solution to energy efficient computing,…

The continuous effort in making artificial neural networks more alike to human brain calls for the hardware elements to implement biological synapse-like functionalities. The recent experimental demonstration of ferroelectric-like FETs…