Related papers: HZO-based FerroNEMS MAC for In-Memory Computing
In this paper we propose and evaluate the performance of a 3D-embedded neuromorphic computation block based on indium gallium zinc oxide ($\alpha$-IGZO) based nanosheet transistor and bi-layer resistive memory devices. We have fabricated…
Ferroelectric memristors have attracted much attention as a type of nonvolatile resistance switching memories in neuromorphic computing, image recognition, and information storage. Their resistance switching mechanisms have been studied…
Voltage driven magneto-electric (ME) switching of ferro-magnets has shown potential for future low-energy spintronic memories. In this paper, we first analyze two different ME devices viz. ME-MTJ and ME-XNOR device with respect to…
The construction of the Hamiltonian matrix \textbf{H} is an essential, yet computationally expensive step in \textit{ab-initio} device simulations based on density-functional theory (DFT). In homogeneous structures, the fact that a unit…
Flexible electronics and neuromorphic computing face key challenges in material integration and function retention. In particular, freestanding membranes suffer from slow sacrificial layer removal and interfacial strain, while neuromorphic…
Deep learning hardware designs have been bottlenecked by conventional memories such as SRAM due to density, leakage and parallel computing challenges. Resistive devices can address the density and volatility issues, but have been limited by…
The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…
Tri-gate ferroelectric FETs with Hf0.5Zr0.5O2 gate insulator for memory and neuromorphic applications are fabricated and characterized for multi-level operation. The conductance and threshold voltage exhibit highly linear and symmetric…
We present a nanomechanical device design to be used in a non-volatile mechanical memory point. The structure is composed of a suspended slender nanowire (width : 100nm, thickness 430nm length : 8 to 30$\mu$m) clamped at its both ends.…
In this work, we theoretically and experimentally investigate the working principle and non-volatile memory (NVM) functionality of 2D $\alpha$-In$_2$Se$_3$ based ferroelectric-semiconductor-metal-junction (FeSMJ). First, we analyze the…
We propose a framework to model ferroelectric negative capacitance: electrostatic Micro Electro Mechanical Systems (MEMS) hybrid actuators and analyze their dynamic (step input) response. Using this framework, we report the first proposal…
Freestanding ferroelectric membranes are promising for flexible electronics, nonvolatile memory, photonics, and spintronics, but their synthesis is challenged by the need for reproducibility with precise stoichiometric control. Here, we…
Despite all the progress of semiconductor integrated circuit technology, the extreme complexity of the human cerebral cortex makes the hardware implementation of neuromorphic networks with a comparable number of devices exceptionally…
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel…
Analog in-memory computing is an emerging paradigm designed to efficiently accelerate deep neural network workloads. Recent advancements have focused on either inference or training acceleration. However, a unified analog in-memory…
We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS$_2$). Semiconductor - oxide…
Comprehensive understanding of the world's most energy efficient powerful computer, the human brain, is an elusive scientific issue. Still, already gained knowledge indicates memristors can be used as a building block to model the brain. At…
Long-range ferroelectric crystalline order usually fades away as the spatial dimension decreases, hence there are few two-dimensional (2D) ferroelectrics and far fewer one-dimensional (1D) ferroelectrics. Due to the depolarization field,…
Since the first report of ferroelectricity in nanoscale HfO$_2$-based thin films in 2011, this silicon-compatible binary oxide has quickly garnered intense interest in academia and industry, and continues to do so. Despite its deceivingly…
Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one…