Related papers: HZO-based FerroNEMS MAC for In-Memory Computing

In this study, a machine learning-based technique is developed to reduce the computational cost required to explore large design spaces of substitutional alloys. The first advancement is based on a neural network approach to predict the…

Neuromorphic vision sensors (NVS) can enable energy savings due to their event-driven that exploits the temporal redundancy in video streams from a stationary camera. However, noise-driven events lead to the false triggering of the object…

The ability to probe a materials electromechanical functionality on the nanoscale is critical to applications from energy storage and computing to biology and medicine. Voltage modulated atomic force microscopy (VM-AFM) has become a…

TiO2 ferroelectric field effect transistors (FeFETs) with HfZrO2 (HZO) ferroelectric dielectric layers and bottom gate topology are fabricated for applications in neuromorphic systems. Two sets of devices are fabricated with different gate…

The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's…

Ferroelectric oxides have attracted much attention due to their wide range of applications, especially in electronic devices such as nonvolatile memories and tunnel junctions. As a result, the monolithic integration of these materials into…

Compute-in-memory (CIM) techniques are widely employed in energy-efficient artificial intelligent (AI) processors. They alleviate power and latency bottlenecks caused by extensive data movements between compute and storage units. To extend…

Ferroelectric HfO2 is a promising candidate for next-generation memory devices due to its CMOS compatibility and ability to retain polarization at nanometer scales. However, the polar orthorhombic phase (Pca2_1) responsible for…

HfO$_2$-based ferroelectrics are one of the most actively developed functional materials for memory devices. However, in HfO$_2$-based ferroelectric devices, dielectric breakdown is a main failure mechanism during repeated polarization…

We demonstrate high accuracy classification for handwritten digits from the MNIST dataset ($\sim$98.00$\%$) and RGB images from the CIFAR-10 dataset ($\sim$86.80$\%$) by using resistive memories based on a 2D van-der-Waals semiconductor:…

Deployment of modern TinyML tasks on small battery-constrained IoT devices requires high computational energy efficiency. Analog In-Memory Computing (IMC) using non-volatile memory (NVM) promises major efficiency improvements in deep neural…

Van der Waals (vdW) p-n heterojunctions are important building blocks for advanced electronics and optoelectronics, in which high-quality heterojunctions essentially determine device performances or functionalities. Creating tunable…

In scenarios with limited training data or where explainability is crucial, conventional neural network-based machine learning models often face challenges. In contrast, Bayesian inference-based algorithms excel in providing interpretable…

We demonstrate, for the first time, non-volatile charge-trap flash memory (CTM) co-located with heterogeneous III-V/Si photonics. The wafer-bonded III-V/Si CTM cell facilitates non-volatile optical functionality for a variety of devices…

High-k dielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-k dielectric materials, we propose a fitness model (energy…

The interest in the ferroelectric non-volatile memory as a candidate for low power consumption electronic memories was raised after the discovery of ferroelectricity in hafnium oxide. Doping by different elements of hafnia films allows…

Metal-organic framework (MOF) UiO-66 nanocrystals were previously believed to be piezo/ferro-electrically inactive because of their centrosymmetric lattice symmetries (Fm-3m (225)) revealed by Powder X-ray diffraction. However, via delicate…

Fully Homomorphic Encryption (FHE) relies heavily on the Number Theoretic Transform (NTT), making NTT a major performance bottleneck due to its intensive polynomial computations. Hybrid Homomorphic Encryption (HHE), which integrates…

While $Hf_{0.5}Zr_{0.5}O_2$ (HZO) thin films hold significant promise for modern nanoelectronic devices, a comprehensive understanding of the interplay between their polycrystalline structure and electrical properties remains elusive. Here,…

The wake-up phenomenon widely exists in hafnia-based ferroelectric capacitors, which causes device parameter variation over time. Crystallization at higher temperatures have been reported to be effective in eliminating wake-up, but high…