Van der Waals (vdW) p-n heterojunctions are important building blocks for advanced electronics and optoelectronics, in which high-quality heterojunctions essentially determine device performances or functionalities. Creating tunable depletion regions with substantially suppressed leakage currents presents huge challenges, but is crucial for heterojunction applications. Here, by using band-aligned p-type SnSe and n-type ferroelectric {\alpha}-In2Se3 as a model, we report near-ideal multifunctional vdW p-n heterojunctions with small reverse leakage currents (0.1 pA) and a desired diode ideality factor (1.95). We realize ferroelectric-tuned band alignment with a giant barrier modulation of 900 meV. Based on such tunable heterojunctions, we propose and demonstrate a fundamental different memory device termed ferroelectric junction field-effect transistor memory, which shows large memory windows (1.8 V), ultrafast speed (100 ns), high operation temperature (393 K), and low cycle-to-cycle variation (2%). Additionally, the reliable synaptic characteristics of these memory devices promise low-power neuromorphic computing. Our work provides a new device platform with switchable memory heterojunctions, applicable to high performance brain-inspired electronics and optoelectronics.
@article{arxiv.2510.10521,
title = {A ferroelectric junction transistor memory made from switchable van der Waals p-n heterojunctions},
author = {Baoyu Wang and Lingrui Zou and Tao Wang and Lijun Xu and Zexin Dong and Chuan Qin and Xin He and Shangui Lan and Yinchang Ma and Meng Tang and Maolin Chen and Chen Liu and Zheng-Dong Luo and Lijie Zhang and Zhenhua Wu and Yan Liu and Genquan Han and Bin Yu and Xixiang Zhang and Kai Chang and Fei Xue},
journal= {arXiv preprint arXiv:2510.10521},
year = {2026}
}