Related papers: HZO-based FerroNEMS MAC for In-Memory Computing
HfO$_{2}$-based ferroelectric thin films are promising for their application in ferroelectric devices. Predicting the ultimate magnitude of polarization and understanding its switching mechanism are critical to realize the optimal…
Piezoelectric micro-electro-mechanical systems have significant market potential owing to their superior capabilities of transduction to those of standard capacitive and piezoresistive devices. However, piezoelectric films are often lossy,…
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…
We have developed an operando laser-based photoemission electron microscope (laser-PEEM) with a ferroelectric characterization system. A Sawyer-Tower circuit was implemented to measure the polarization-voltage ($P-V$) characteristics of…
In this paper, we report the electrical and structural properties of the oxide-based metal/ferroelectric/metal (MFM) junctions. The heterostructures are composed of ultrathin layers of La0.7Ca0.3MnO3 (LCMO) as a metallic layer and, BaTiO3…
Integrated optoelectronic systems strive to combine the logic/memory density of electronics with the bandwidth of photonics, but monolithic realization is impeded by the inefficient electronic-to-photonic interface. Current architectures…
A multi-bit digital weight cell for high-performance, inference-only non-GPU-like neuromorphic accelerators is presented. The cell is designed with simplicity of peripheral circuitry in mind. Non-volatile storage of weights which eliminates…
Numerous measurements of the dielectric constant $\epsilon$ of the recently discovered ferroelectric nematic ($N_F$) liquid crystal (LC) phase report extraordinarily large values of $\epsilon^\prime$ (up to ~30,000). We show that what is in…
High-entropy MBenes (HE-MBenes) represent a promising, unexplored class of 2D materials for electrocatalysis. In this work, we present a systematic computational screening of 56 equiatomic quinary HE-MBene compositions from the {Ti, V, Cr,…
We discuss the particle size driven tunability of the coexistence of ferromagnetism and ferroelectricity in Pr0.67Ca0.33MnO3(PCMO) with the help of x ray diffraction, magnetization, impedance spectroscopy, and remanent polarization…
The discovery of ferroelectricity in HfO$_2$-based thin films opens up new opportunities for using this silicon-compatible ferroelectric to realize low-power logic circuits and high-density non-volatile memories. The functional performances…
Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET…
Leveraging the high density and energy efficiency of Compute-In-Memory (CIM) crossbar-based Deep Neural Network (DNN) accelerators requires optimal Design Space Exploration (DSE), which becomes increasingly challenging as complex models for…
Non-volatile memories (NVMs) offer negligible leakage power consumption, high integration density, and data retention, but their non-volatility also raises the risk of data exposure. Conventional encryption techniques such as the Advanced…
Convolutional neural networks (CNNs) require high throughput hardware accelerators for real time applications owing to their huge computational cost. Most traditional CNN accelerators rely on single core, linear processing elements (PEs) in…
In this paper, we report on the charge transport properties of hybrid nanoparticles (NPs) based on the polymeric 1D compound [Fe(Htrz)2(trz)](BF4), which is one of the most promising SCO systems for designing electronic devices. In…
In this paper, we demonstrate low-thermal-budget ferroelectric field-effect transistors (FeFETs) based on two-dimensional ferroelectric CuInP2S6 (CIPS) and oxide semiconductor InZnO (IZO). The CIPS/IZO FeFETs exhibit non-volatile memory…
The rapid growth of digital technology has driven the need for efficient storage solutions, positioning memristors as promising candidates for next-generation non-volatile memory (NVM) due to their superior electrical properties. Organic…
Brain-inspired computing aims to mimic cognitive functions like associative memory, the ability to recall complete patterns from partial cues. Memristor technology offers promising hardware for such neuromorphic systems due to its potential…
Big data applications are on the rise, and so is the number of data centers. The ever-increasing massive data pool needs to be periodically backed up in a secure environment. Moreover, a massive amount of securely backed-up data is required…