Structural Properties and Thermodynamics of Hafnium sub-oxides in RRAM

Philippe Blaise; Boubacar Traore

Structural Properties and Thermodynamics of Hafnium sub-oxides in RRAM

Materials Science 2015-11-25 v1

Authors: Philippe Blaise , Boubacar Traore

Abstract

We study the structural and electronic properties of various hafnium sub-oxides HfzO from z = 9 to z = 0.5, by ab initio simulation using Density Functional Theory. The stability of these sub-oxides is studied against monoclinic HfO2. The progressive oxidation of a given HfzO is also envisaged toward stoichiometric HfO2. The analogy with a conductive region of electrons inside a HfO2 matrix is discussed within the context of Oxide-based Resistive Random Access Memories (OxRRAM) devices which employ hafnium dioxide as an insulator.

Keywords

hafnium sub-oxides density functional theory resistive random access memory structural properties thermodynamic stability ab initio simulation hafnium dioxide

Cite

@article{arxiv.1511.07665,
  title  = {Structural Properties and Thermodynamics of Hafnium sub-oxides in RRAM},
  author = {Philippe Blaise and Boubacar Traore},
  journal= {arXiv preprint arXiv:1511.07665},
  year   = {2015}
}

Comments

4 pages, 2 figures

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