Related papers: Current-driven writing process in antiferromagneti…
In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach to achieving ultra-low power spintronic devices via suppressing Joule heating. In this article,…
The family of monolayer two-dimensional (2D) materials hosts a wide range of interesting phenomena, including superconductivity, charge density waves, topological states and ferromagnetism, but direct evidence for antiferromagnetism in the…
We demonstrate all-optical manipulation of magnetic domains in NiO/Pt and CoO/Pt thin films with insulating antiferromagnetic layers. Using magneto-optical birefringence imaging, we show that even a single laser pulse can thermally…
Flexible and efficient manipulation of magnetic configurations can be challenging. In the design of practical devices, achieving a high effective magnetic field with a low working current is under tight demand. Here, we report a unique…
We investigate the ultrafast magnetization dynamics of semiconducting antiferromagnetic CrSBr using real-time time-dependent density functional theory. In zero magnetic field, laser excitation modifies only the magnetization along the easy…
Electrical switching of N\'eel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically-driven switching of ferromagnetic order via spin-orbit torques, electrical switching of…
Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of…
Among antiferromagnetic materials, Mn$_2$Au is one of the most intensively studied, and it serves as a very popular platform for testing various ideas related to antiferromagnetic magnetotransport and dynamics. Since recently, this material…
Electrical and optical pulsing allow for manipulating the order parameter and magnetoresistance of antiferromagnets, opening novel prospects for digital and analog data storage in spintronic devices. Recent experiments in CuMnAs have…
We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronics device with potential high frequency operation. By using state-of-the-art density…
Hard X-ray angle-resolved photoemission spectroscopy reveals the momentum-resolved band structure in an epitaxial Mn2Au(001) film capped by a 2 nm thick ferromagnetic Permalloy layer. By magnetizing the Permalloy capping layer, the…
Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a…
We develop a theory for spin transported by coherent Neel dynamics through an antiferromagnetic insulator coupled to a ferromagnetic insulator on one side and a current-carrying normal metal with strong spin-orbit coupling on the other. The…
Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This…
N\'eel vector, the order parameter of collinear antiferromagnets, serves as a state variable in associated antiferromagnetic (AFM) spintronic devices to encode information. A deterministic switching of N\'eel vector is crucial for the…
A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…
The precise manipulation of transverse magnetic domain walls in finite/infinite nanowires with artificial defects under the influence of very short spin-polarized current pulses is investigated. We show that for a classical $3d$ ferromagnet…
Ultrathin ferromagnetic strips with high perpendicular anisotropy have been proposed for the development of memory devices where the information is coded in tiny domains separated by domain walls. The design of practical devices requires…
We present a theoretical formalism to address the dynamics of textured, noncolliear antiferromagnets subject to spin current injection. We derive sine-Gordon type equations of motion for the antiferromagnets, which are applicable to…
Quantitative investigation on the current-induced torque in antiferromagnets represents a great challenge, due to the lack of an independent method for controlling N\'eel vectors. Here by utilizing an antiferromagnetic insulator with…