Electric-Field-Controlled Antiferromagnetic Spintronic Devices
Abstract
In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach to achieving ultra-low power spintronic devices via suppressing Joule heating. In this article, cutting-edge research, including electric-field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, are comprehensively reviewed. Various emergent topics such as the Neel spin-orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, two-dimensional magnetism, and magneto-ionic modulation with respect to antiferromagnets are examined. In conclusion, we envision the possibility of realizing high-quality room-temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons. It is expected that this work provides an appropriate and forward-looking perspective that will promote the rapid development of this field.
Keywords
Cite
@article{arxiv.2108.04446,
title = {Electric-Field-Controlled Antiferromagnetic Spintronic Devices},
author = {Han Yan and Zexin Feng and Peixin Qin and Xiaorong Zhou and Huixin Guo and Xiaoning Wang and Hongyu Chen and Xin Zhang and Haojiang Wu and Chengbao Jiang and Zhiqi Liu},
journal= {arXiv preprint arXiv:2108.04446},
year = {2021}
}
Comments
47 pages, 21 figures. Review