Electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultra-dense and ultra-stable antiferromagnetic memory with high processing speed for modern information technology. Here, we have advanced towards this goal by achieving an electrical-controllable antiferromagnet-based tunnel junction of Pt/Co/Pt/Co/IrMn/MgO/Pt. The exchange coupling between antiferromagnetic IrMn and Co/Pt perpendicular magnetic multilayers results in the formation of interfacial exchange bias and exchange spring in IrMn. Encoding information states 0 and 1 is realized through the exchange spring in IrMn, which can be electrically written by spin-orbit torque switching with high cyclability and electrically read by antiferromagnetic tunneling anisotropic magnetoresistance. Combining spin-orbit torque switching of both exchange spring andexchange bias, 16 Boolean logic operation is successfully demonstrated. With both memory and logic functionalities integrated into our electrical-controllable antiferromagnetic-based tunnel junction, we chart the course toward high-performance antiferromagnetic logic-in-memory.
@article{arxiv.2404.01144,
title = {Electrical-controllable antiferromagnet-based tunnel junction},
author = {Lei Han and Xuming Luo and Yingqian Xu and Hua Bai and Wenxuan Zhu and Yuxiang Zhu and Guoqiang Yu and Cheng Song and Feng Pan},
journal= {arXiv preprint arXiv:2404.01144},
year = {2024}
}