Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o switching of N\'eel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite N\'eel vectors as binary "0" and "1". However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90o or 120o switching of N\'eel vector, which unavoidably require multiple writing channels that contradicts ultra-dense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier, and experimentally achieve electrical 180o switching of spin-splitting antiferromagnet Mn5Si3. Such a 180o switching is read out by the N\'eel vector-induced anomalous Hall effect. Based on our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high and low resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet.
@article{arxiv.2401.17608,
title = {Electrical 180o switching of N\'eel vector in spin-splitting antiferromagnet},
author = {Lei Han and Xizhi Fu and Rui Peng and Xingkai Cheng and Jiankun Dai and Liangyang Liu and Yidian Li and Yichi Zhang and Wenxuan Zhu and Hua Bai and Yongjian Zhou and Shixuan Liang and Chong Chen and Qian Wang and Xianzhe Chen and Luyi Yang and Yang Zhang and Cheng Song and Junwei Liu and Feng Pan},
journal= {arXiv preprint arXiv:2401.17608},
year = {2024}
}