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Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to…
Antiferromagnets exhibit distinctive characteristics such as ultrafast dynamics and robustness against perturbative fields, thereby attracting considerable interest in fundamental physics and technological applications. Recently, it was…
Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices. Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields,…
Control of the Neel vector in antiferromagnetic materials is one of the challenges preventing their use as active device components. Several methods have been investigated such as exchange bias, electric current, and spin injection, but…
Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with…
Antiferromagnets have large potential for ultrafast coherent switching of magnetic order with minimum heat dissipation. In novel materials such as Mn$_2$Au and CuMnAs, electric rather than magnetic fields may control antiferromagnetic order…
Electrical switching of antiferromagnets (AFM) is critical for AFM spintronics. However, electrical pulse-induced Neel vector reorientation in AFM insulators, while predicted to occur at much faster timescales than ferromagnetic switching,…
Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance.…
In antiferromagnetic spintronics, it is essential to separate the resistance modifications of purely magnetic origin from other effects generated by current pulses intended to switch the N\'eel vector. We investigate the magnetoresistance…
Altermagnets, a newly discovered class of magnets, integrate the advantages of both ferromagnets and antiferromagnets, such as enabling anomalous transport without stray fields and supporting ultrafast spin dynamics, offering exciting…
Antiferromagnetic (AFM) spintronics has been receiving tremendous attention due to their ultrafast kinetics, zero stray field, immune to external magnetic field, and potential to minimizing magnetic storage devices. The optical control of…
The switching dynamics of a single-domain BiFeO$_3$ thin films is investigated through combining the dynamics of polarization and Neel vector. The evolution of the ferroelectric polarization is described by the Landau-Khalatnikov (LK)…
We investigate the current-induced switching of the Neel order in NiO(001)/Pt heterostructures,which is manifested electrically via the spin Hall magnetoresistance. Significant reversible changes in the longitudinal and transverse…
The motion of a N\'eel-like ${180}^{\circ}$ domain wall induced by a time-dependent staggered spin-orbit field in the layered collinear antiferromagnet Mn$_2$Au is explored. Through an effective version of the two sublattice nonlinear…
Of the new types of cryoelectronic devices under development, including phase shifters, giant magnetoresistance switches, diodes, transistors, and memory cells, some are based on hybrid superconductor-normal metal or…
Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge…
Chiral domain walls of Neel type emerge in heterostructures that include heavy metal (HM) and ferromagnetic metal (FM) layers owing to the Dzyaloshinskii-Moriya (DM) interaction at the HM/FM interface. In developing storage class memories…
The field-free spin-orbit torque induced 180{\deg} reorientation of perpendicular magnetization is beneficial for the high performance magnetic memory. The antiferromagnetic material (AFM) can provide higher operation speed than the…
Discovering alternative ways to drive domain wall (DW) dynamics is crucial for advancing spintronic applications. Here we demonstrate via atomistic spin dynamics simulations that optical torques can efficiently drive 90^{\circ} DWs in the…
Electrical manipulation of antiferromagnetic states, a cornerstone of antiferromagnetic spintronics, is a great challenge, requiring novel material platforms. Here we report the full control over antiferromagnetic states by voltage pulses…