Spin flop and crystalline anisotropic magnetoresistance in CuMnAs
Abstract
Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a better understanding of those mechanisms. Here we report a magnetic field induced rotation of the antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using soft x-ray magnetic linear dichroism spectroscopy, x-ray photoemission electron microscopy, integral magnetometry and magneto-transport methods, we demonstrate spin-flop switching and continuous spin reorientation in antiferromagnetic films with uniaxial and biaxial magnetic anisotropies, respectively. From field-dependent measurements of the magnetization and magnetoresistance, we obtain key material parameters including the anisotropic magnetoresistance coefficients, magnetocrystalline anisotropy, spin-flop and exchange fields.
Keywords
Cite
@article{arxiv.1911.12381,
title = {Spin flop and crystalline anisotropic magnetoresistance in CuMnAs},
author = {M. Wang and C. Andrews and S. Reimers and O. J. Amin and P. Wadley and R. P. Campion and S. F. Poole and J. Felton and K. W. Edmonds and B. L. Gallagher and A. W. Rushforth and O. Makarovsky and K. Gas and M. Sawicki and D. Kriegner and J. Zubac and K. Olejnik and V. Novak and T. Jungwirth and M. Shahrokhvand and U. Zeitler and S. S. Dhesi and F. Maccherozzi},
journal= {arXiv preprint arXiv:1911.12381},
year = {2021}
}
Comments
26 pages, 6 figures